Photovoltaic Device Integrated Bypass Diode Interface
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Solution Overview
Problem
Photovoltaic devices face efficiency loss and damage due to inactive cells under shading, which existing technologies struggle to address effectively, especially in perovskite thin-film technology, where complex and expensive processes are required for integrating bypass diodes.
Innovation Solution
A photovoltaic device with integrated bypass diodes is manufactured using a simplified process, where the interface regions between cells include a PN-junction that acts as a bypass, allowing for a larger class of materials and optimizing surface area for photo-electric conversion, including the extension of electrode layers and separate PN-junction layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate bypass diodes are mounted as external elements, then bypass function is provided, but device complexity increases and reliability decreases due to external connections
Solution Approach 1:
The bypass diode is merged with the photovoltaic cell structure by forming the PN-junction within the interface region between cells. The second electrode side charge carrier transport layer of the first cell and the first electrode side charge carrier transport layer of the second cell form the P and N layers of the bypass diode respectively, eliminating the need for separate external bypass diodes and their connections.
Solution Approach 2:
The interface region between photovoltaic cells serves dual functions: it provides the electrical series connection between cells and simultaneously contains the PN-junction that functions as a bypass diode. This multi-functionality reduces device complexity while maintaining reliability.
2Ease of manufacture
If extrinsic doping is used to create integrated bypass diode, then bypass function is integrated, but manufacturing complexity and cost increase due to vacuum, lithography and other expensive process steps
Solution Approach 1:
The invention changes the manufacturing approach from extrinsic doping (requiring vacuum and lithography) to a layer deposition method where the charge carrier transport layers are deposited as continuous films. The PN-junction is formed by the interface between these layers, eliminating the need for complex doping processes while maintaining the bypass diode function.
3Reliability
If interface region area is increased for bypass current, then bypass capability is improved, but surface area for photo-electric conversion is reduced
Solution Approach 1:
The interface region is designed with localized properties: it has sufficient width to provide adequate bypass capability through the PN-junction, while the photovoltaic cell regions maintain their full width for optimal photo-electric conversion. The charge carrier transport layers extend across the entire cell width including the interface region, ensuring both functions are satisfied.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables efficient bypassing of inactive cells, preventing efficiency loss and damage, while simplifying the manufacturing process and reducing costs, particularly suitable for perovskite photovoltaic technology.
Implementation Method 1
The interface region between each pair of mutually succeeding photovoltaic cells provides for their electrical series connection and also includes a PN-junction that serves as a bypass for an adjoining PV-cell
Implementation Method 2
Photovoltaic devices are typically provided as panels having a plurality of serially arranged photovoltaic device cells
Data Source
Figure 1A~1B
Figure 2~2C
Figure 2A~2B
AI summary
A photovoltaic device (1) is provided with plurality of mutually subsequent photovoltaic device cells (1A,..., 1F) arranged along a direction of first device axis (D1). Each pair of a photovoltaic device cell and its successor are serially arranged through an interface region (1CD), further having a bypass function, and which extends along a second axis (D2), transverse to the first axis.