PVD Chamber In-Situ Plasma Cleaning for Low Particle Contamination
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Solution Overview
Problem
Physical vapor deposition (PVD) chambers face frequent maintenance due to material buildup and contamination, which limits the target life cycle and increases costs, as existing methods struggle to maintain low particle contamination levels and require frequent replacement of process kit components.
Innovation Solution
A processing chamber design with a target backing plate, substrate support, and contoured shield, along with an in-chamber cleaning method using inert gas and reactant flow to selectively etch or sputter built-up materials, allowing for extended target life cycles without opening the chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If frequent preventative maintenance is performed to remove material buildup, then contamination levels are maintained, but target life cycle and productivity decrease
Solution Approach 1:
The patent applies preliminary action by performing in-situ cleaning of the process kit during the deposition process itself, before material buildup reaches contamination-critical levels. The cleaning system activates during deposition to prevent buildup accumulation, allowing the target to run through its full life cycle without interruption for maintenance.
Solution Approach 2:
The patent implements continuity of useful action by enabling the deposition process to continue uninterrupted through in-situ cleaning. The cleaning occurs during the deposition process rather than requiring chamber opening and process interruption, maintaining continuous production while controlling contamination.
2Reliability
If the PVD chamber is opened frequently to replace process kit components, then material buildup is removed, but throughput and productivity are reduced
Solution Approach 1:
The patent applies self-service by enabling the process kit to clean itself in-situ during the deposition process. The cleaning system directs reactive species onto the process kit surfaces within the chamber, allowing the kit to maintain cleanliness without removal or chamber opening, thus preserving throughput.
Solution Approach 2:
The patent replaces the mechanical system of chamber opening and physical process kit removal with a field-based cleaning mechanism using reactive species. This substitution eliminates the need for mechanical intervention and chamber opening, maintaining continuous operation and high throughput.
3Reliability
If existing cleaning methods are used, then some material buildup is removed, but low particle contamination specifications cannot be met
Solution Approach 1:
The patent applies parameter changes by utilizing reactive species with specific chemical properties that selectively etch organic and inorganic materials at the molecular level. This chemical approach, rather than mechanical cleaning, achieves complete removal of particle contamination and meets low specification requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution extends the target life cycle of the process kit, enabling the PVD chamber to run a full target life cycle of 3600 KWHR SiN process, reducing maintenance frequency and maintaining low particle contamination levels.
Implementation Method 1
an in-chamber cleaning method using inert gas and reactant flow to selectively etch or sputter built-up materials
Implementation Method 2
an in-chamber cleaning method using inert gas and reactant flow to selectively etch or sputter built-up materials
Implementation Method 3
Cleaning of sin with CCP plasma or RPS clean
Data Source
AI summary
A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.