PVD Chamber Plate Layout for Stable Plasma Ignition Pressure

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Solution Overview

Problem

Existing physical vapor deposition (PVD) systems face challenges in maintaining optimal chamber pressure for plasma ignition, leading to inconsistent film deposition on substrates.

Innovation Solution

A PVD apparatus with a chamber plate design featuring tunable nut plates and cavities, allowing precise control of gas ingress and egress to maintain target pressure, enhancing plasma ignition and film deposition quality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If traditional chamber plate design is used, then structural simplicity is maintained, but chamber pressure control precision deteriorates

Engineering Contradiction:
Improvechamber pressure control precisionVSAvoidchamber plate structure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The chamber plate is divided into multiple sections with individual nut plates and cavities. Each nut plate can be independently adjusted to control gas flow through its associated cavity, enabling precise localized pressure control rather than uniform control across the entire chamber plate.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The nut plates are designed to be tunable and adjustable during operation. The degree of tuning of each nut plate can be modified to dynamically control the size of cavities and corresponding opening areas, allowing real-time adjustment of gas ingress and egress rates to maintain optimal chamber pressure.

Inventive Principle:
Principle #15Dynamics

2Reliability

If gas flow is not precisely controlled, then system operation is simple, but plasma ignition stability deteriorates

Engineering Contradiction:
Improveplasma ignition stabilityVSAvoidpressure control operation
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The system monitors chamber pressure and the degree of tuning of nut plates, and automatically adjusts nut plate positions to maintain target pressure. This closed-loop feedback control ensures stable plasma ignition by continuously maintaining optimal pressure conditions without requiring manual intervention.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The invention changes the physical state and flow characteristics of gas by controlling the opening areas of multiple cavities through adjustable nut plates. By modifying gas ingress and egress rates independently for different regions, the system optimizes overall chamber pressure for reliable plasma ignition.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If chamber pressure is not maintained consistently, then device operation is simple, but film deposition quality deteriorates

Engineering Contradiction:
Improvefilm deposition qualityVSAvoidpressure control mechanism
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The chamber plate is segmented into multiple regions, each with its own nut plate and cavity configuration. This allows independent control of gas flow in different areas, enabling precise maintenance of chamber pressure conditions required for high-quality film deposition across the substrate surface.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The multiple nut plates and cavities serve dual functions: they control gas ingress and egress to maintain chamber pressure, and also influence plasma distribution and film deposition uniformity. This multi-functionality achieves both pressure stability and deposition quality without requiring separate control systems.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus ensures stable plasma ignition and improved film deposition by maintaining consistent chamber pressure, resulting in higher quality thin films on substrates.

Implementation Method 1

A sputtering process may occur by bombarding a sputtering target with highly energized ions (as in a plasma) to free particles from the sputtering target. The free particles then attach themselves to the substrate, thereby forming a thin film.

Methodology Applied
Scientific EffectSputtering: Sputtering

Implementation Method 2

During sputtering, the pressure of the chamber must be suitable for the plasma ignition to occur.

Methodology Applied
Scientific EffectPlasma ignition: Plasma

Data Source

PatentUS12480204B2Physical vapor deposition apparatus
Publication Date: 2025.11.25 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12480204B2 patent drawing
  • US12480204B2 patent drawing
  • US12480204B2 patent drawing

AI summary

A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.