PVD Tool Electromagnetic Modulation for High-Rate Inert Metal Deposition
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Solution Overview
Problem
Physical vapor deposition tools face challenges in achieving high deposition rates without plasma leakage and grain size issues that affect the resistivity and yield of integrated circuit devices, necessitating additional resources and increased field returns.
Innovation Solution
A physical vapor deposition tool with a magnet component, single cathode, and power circuit that modulates an electromagnetic field using spiral-shaped magnets and biasing, reducing plasma leakage and grain size to enhance throughput and reduce resistivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high deposition rate is achieved in physical vapor deposition, then productivity is improved, but plasma leakage increases and film quality deteriorates
Solution Approach 1:
The patent applies parameter changes by modulating the electromagnetic field characteristics (frequency, power, spatial distribution) to control plasma behavior. By adjusting these parameters, the system achieves high deposition rates while maintaining plasma confinement and film quality, resolving the contradiction between productivity and reliability.
Solution Approach 2:
The patent implements dynamics through real-time modulation of the electromagnetic field during deposition. The system dynamically adjusts field strength and distribution to optimize both deposition rate and plasma confinement, allowing the process to adapt to changing conditions and maintain film quality at high productivity levels.
2Productivity
If high deposition rate is achieved in physical vapor deposition, then productivity is improved, but resistivity issues increase
Solution Approach 1:
The patent uses parameter changes in the electromagnetic field to control plasma temperature and ion energy, which directly affect film resistivity. By optimizing these parameters, the system achieves high deposition rates while maintaining precise resistivity control, resolving the contradiction between productivity and manufacturing precision.
3Productivity
If plasma leakage increases in physical vapor deposition, then deposition rate may increase, but yield decreases
Solution Approach 1:
The patent implements dynamic control of the electromagnetic field to confine plasma within the processing zone. The system adjusts field parameters in real-time to prevent plasma leakage while maintaining high deposition rates, thereby preserving both productivity and yield.
4Productivity
If conventional PVD tool configuration is used, then device complexity is low, but throughput is insufficient for mass production
Solution Approach 1:
The patent applies universality by designing an electromagnetic field system that performs multiple functions: plasma generation, plasma confinement, deposition rate control, and film quality optimization. This multi-functional approach increases throughput while keeping the overall tool configuration relatively simple, resolving the contradiction between productivity and device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves deposition rates and reduces resistivity, minimizing resource requirements and enhancing the yield and performance of integrated circuit devices.
Implementation Method 1
modulate an electromagnetic field emanating from the magnet component
Implementation Method 2
The electromagnetic field includes spiral-shaped bands having different ranges of magnetic strengths
Implementation Method 3
The ions in the plasma are accelerated toward a cathode formed of the material to be deposited, which causes the ions to bombard the cathode and release particles of the material
Implementation Method 4
providing the biasing power to the pedestal component modulates an electromagnetic field including spiral-shaped bands
Data Source
AI summary
Some implementations described herein provide a physical vapor deposition tool. The physical vapor deposition tool includes a magnet component, a single cathode, and a power circuit for biasing a pedestal that supports a semiconductor substrate. During a deposition operation that deposits an inert metal material, the physical vapor deposition tool may modulate an electromagnetic field emanating from the magnet component that includes spiral-shaped bands having different ranges of magnetic strength. The physical vapor deposition tool may have an increased throughput relative to a physical vapor deposition tool without the magnet component, the single cathode, and the power circuit. Additionally, or alternatively, the inert metal material may have a grain size that is greater relative to a grain size of an inert metal material deposited using the physical vapor deposition tool without the magnet component, the single cathode, and the power circuit.