PVD Magnetic Assembly Tuning for Uniform Film Thickness
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Solution Overview
Problem
The challenge in physical vapor deposition (PVD) processes is achieving a uniform magnetic flux distribution, leading to non-uniform target erosion and film deposition on semiconductor substrates due to non-uniform plasma ion distribution caused by uneven magnetic flux, resulting in premature target wear and non-uniform film quality.
Innovation Solution
A magnetic assembly with a specific arrangement of permanent magnets is used to produce a substantially uniform magnetic flux distribution by adjusting the position and removal of magnetic columns, optimizing the target-to-substrate spacing, and controlling the magnetic field to ensure even target erosion and uniform film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional magnetic assembly with fixed magnetic columns is used, then the device structure is simple, but the magnetic flux distribution is non-uniform causing non-uniform film deposition
Solution Approach 1:
The magnetic assembly is divided into multiple independently adjustable magnetic columns instead of a fixed structure. Each magnetic column can be individually positioned to optimize the magnetic flux distribution across the target surface, enabling uniform film deposition while maintaining manageable system complexity through modular design
Solution Approach 2:
The magnetic columns are made dynamically adjustable rather than fixed. The positions of the magnetic columns can be modified during operation to optimize magnetic flux distribution for different deposition conditions, transforming a static structure into a dynamic system that adapts to achieve uniform film thickness
2Manufacturing precision
If magnetic columns are removed to improve magnetic flux uniformity, then film deposition uniformity improves, but the magnetic field strength decreases
Solution Approach 1:
Instead of uniformly reducing magnetic field strength by removing columns, the invention applies magnetic field locally where needed. By selectively positioning and adjusting individual magnetic columns, the magnetic field is concentrated in regions requiring enhanced flux while maintaining overall uniformity, thus preserving magnetic field strength where necessary while achieving uniform deposition
Solution Approach 2:
The invention changes the parameters of the magnetic assembly by adjusting the positions and configurations of magnetic columns rather than simply removing them. This allows optimization of both magnetic field strength and flux distribution uniformity by modifying structural parameters to achieve the desired balance between field intensity and uniformity
3Manufacturing precision
If target-to-substrate spacing is reduced to improve film uniformity, then deposition uniformity improves, but the chamber space utilization decreases
Solution Approach 1:
The invention replaces the mechanical approach of adjusting physical spacing with a magnetic field-based solution. By optimizing magnetic column positions and configurations, the desired film uniformity is achieved through magnetic field control rather than mechanical spacing adjustment, thus preserving chamber space while maintaining deposition quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a more uniform film thickness and resistivity across the semiconductor substrate, reducing the need for frequent target replacement and improving the overall quality and consistency of the deposited films.
Implementation Method 1
A magnetic assembly with a specific arrangement of permanent magnets is used to produce a substantially uniform magnetic flux distribution
Implementation Method 2
PVD is a plasma process performed in a vacuum chamber where a negatively biased target is exposed to a plasma of an inert gas
Implementation Method 3
Bombardment of the target by ions of the inert gas results in ejection of atoms of the target material
Data Source
AI summary
Embodiments are directed to a method of optimizing thickness of a target material film deposited on a semiconductor substrate in a semiconductor processing chamber, wherein the semiconductor processing chamber includes a magnetic assembly positioned on the semiconductor processing chamber, the magnetic assembly including a plurality of magnetic columns within the magnetic assembly. The method includes operating the semiconductor processing chamber to deposit a film of target material on a semiconductor substrate positioned within the semiconductor processing chamber, measuring an uniformity of the deposited film, adjusting a position of one or more magnetic columns in the magnetic assembly, and operating the semiconductor processing chamber to deposit the film of the target material after adjusting position of the one or more magnetic columns.