PVD Chamber Magnetic Field Shaping for Uniform Wafer Deposition
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Solution Overview
Problem
In semiconductor manufacturing, the deposition of materials in physical vapor deposition (PVD) chambers is often not uniform due to poor ion capture by the substrate, leading to inefficiencies in the semiconductor processes.
Innovation Solution
The method involves sputtering material from a target in a PVD chamber onto a substrate, where the material is guided through a magnetic field provided by strategically placed upper, first, and second magnets. These magnets create a stronger magnetic field at the edge and central regions of the substrate, improving ion capture and deposition uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional PVD deposition is used, then the process is simple, but the deposition uniformity is poor due to poor ion capture
Solution Approach 1:
The magnetic field system is segmented into multiple independent magnet assemblies positioned at different locations (upper, lower, edge, and center regions). Each magnet assembly independently shapes the magnetic field in its specific region, allowing precise control of ion trajectories across different substrate areas without requiring a single complex magnetic system
Solution Approach 2:
Different magnet assemblies provide locally optimized magnetic field characteristics tailored to specific regions of the substrate. Edge magnets address ion loss at perimeter regions while center magnets address ion capture at central regions, creating non-uniform magnetic field distribution that matches the non-uniform ion transport requirements across the substrate surface
2Productivity
If magnetic field strength is increased to improve ion capture, then deposition rate increases, but ion loss at edge regions worsens
Solution Approach 1:
The magnetic field strength is locally optimized for different substrate regions. Edge magnets provide enhanced magnetic field confinement specifically at perimeter regions to prevent ion loss, while center magnets provide appropriate field strength for ion capture at central regions. This local differentiation allows high deposition rates throughout without sacrificing edge region ion retention
Solution Approach 2:
The multiple magnet assemblies act as intermediary elements that mediate between the sputtering source and the substrate. By positioning magnets at strategic locations (upper, lower, edge, center), they create a distributed magnetic field network that guides ion trajectories and distributes ion flux uniformly across the entire substrate surface, preventing both edge loss and center region deficiency
3Manufacturing precision
If magnets are added to improve ion capture, then deposition uniformity improves, but the number of magnets increases
Solution Approach 1:
The magnetic field system is divided into discrete, modular magnet assemblies positioned at specific locations (upper, lower, edge, and center regions). Each assembly is an independent unit that can be individually optimized and positioned, transforming a potentially complex monolithic magnetic system into manageable segments that collectively achieve uniform deposition control
Solution Approach 2:
The magnet assemblies serve multiple functions simultaneously: they shape magnetic field lines, guide ion trajectories, control plasma distribution, and regulate deposition rates. This multi-functionality reduces the need for additional separate components, achieving comprehensive ion capture control with a integrated magnetic field system rather than multiple separate devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances deposition uniformity and increases the deposition rate by improving ion capture across the substrate, reducing ion loss at the edge regions, and maintaining or increasing deposition rates at the central regions.
Implementation Method 1
at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets
Implementation Method 2
sputtering material from a target disposed in the PVD chamber and onto a substrate
Implementation Method 3
one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate
Implementation Method 4
one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate
Data Source
AI summary
Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.