PVD Apparatus with Segmented Targets and Independent Power Control

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Solution Overview

Problem

Conventional magnetron sputtering systems exhibit uneven target erosion profiles, leading to poor film uniformity and inconsistent film characteristics across semiconductor substrates due to preferential erosion at specific locations influenced by fixed magnetic fields.

Innovation Solution

A PVD apparatus with multiple targets and separately controllable power sources, where each target assembly includes a target and dedicated magnets, allowing for independent control of erosion patterns and film composition by varying power application to achieve uniform film deposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If conventional magnetron sputtering systems use fixed magnetic fields, then plasma density is increased, but uneven target erosion profile occurs leading to poor film uniformity

Engineering Contradiction:
Improveplasma densityVSAvoidfilm uniformity
Core Design Contradiction:
Illumination intensityVSManufacturing precision

Solution Approach 1:

The patent divides the single target into multiple segmented targets (e.g., first target and second target) with separate magnetic fields and power sources. Each target segment can be independently controlled to compensate for erosion non-uniformity, allowing plasma density to be maintained while achieving uniform film deposition across the substrate.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements dynamic control of multiple targets with independently adjustable power sources and magnetic fields. The system can dynamically adjust the erosion rate of each target segment in real-time to maintain uniform film deposition, resolving the contradiction between maintaining high plasma density and achieving film uniformity.

Inventive Principle:
Principle #15Dynamics

2Manufacturing precision

If multiple targets with separate power sources are used, then film uniformity and composition control are improved, but device complexity increases

Engineering Contradiction:
Improvefilm uniformityVSAvoidapparatus complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent designs the multiple target system with shared chamber infrastructure and integrated control mechanisms. While each target has independent power and magnetic control, they share the vacuum chamber, gas distribution system, and substrate stage, reducing the overall complexity increase compared to fully separate systems.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent controls film uniformity and composition by adjusting power parameters and magnetic field parameters for each target independently. This parameter-based control approach allows precise film property control without requiring complex mechanical or structural modifications to the basic sputtering chamber design.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution ensures superior film uniformity and consistent qualities by mitigating uneven erosion profiles, enabling tailored film composition and improved step coverage across semiconductor substrates.

Implementation Method 1

the plasma density above the target is strongly increased by means of magnetic fields. Ions in the high plasma density region produced by the magnetic field, become highly energized. The magnetic fields are produced by a magnet arranged in close proximity to the target.

Methodology Applied
Scientific EffectMagnetic field: Magnetic Field

Implementation Method 2

By means of an electrical field formed between the plasma and target surface, positively charged ions from the plasma are accelerated toward and onto the negatively biased target surface, i.e., the cathode, bombarding the target surface and causing erosion of the target

Methodology Applied
Scientific EffectElectric field: Electric Field

Implementation Method 3

PVD is a deposition process that takes place in the gas phase in which a source material is physically transferred to a substrate in a vacuum. The liberated material from the eroding target is directed to a substrate such as a semiconductor substrate or other workpiece positioned in the deposition chamber.

Methodology Applied
Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Data Source

PatentUS10190209B2PVD apparatus and method with deposition chamber having multiple targets and magnets
Publication Date: 2019.01.29 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US10190209B2 patent drawing
  • US10190209B2 patent drawing
  • US10190209B2 patent drawing

AI summary

A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.