PVD Tungsten Deposition Bottom Coverage and Intermixing Control

The patent applies parameter changes by adjusting RF power levels dynamically during deposition. Higher RF power is used during initial deposition phases to improve bottom coverage, while lower RF power is used in later phases to prevent excessive wafer heating and intermixing. This dynamic parameter adjustment resolves the contradiction between achieving good bottom coverage and controlling wafer temperature.

The patent employs periodic action through multi-step deposition processes with alternating RF power levels. The deposition is divided into multiple steps where high RF power is applied intermittently to enhance bottom coverage, followed by low RF power periods to control temperature. This periodic variation in RF power allows the system to achieve both improved bottom coverage and temperature control.

The patent uses periodic action with multi-step deposition processes. In steps where longer target-to-wafer spacing is employed to improve bottom coverage and ion directionality, the process compensates for reduced deposition rate by implementing multiple deposition steps and optimizing other parameters such as RF power and gas flow rates. This allows the system to achieve improved uniformity while maintaining acceptable productivity through the cumulative effect of multiple steps.

The patent applies parameter changes by adjusting multiple deposition parameters simultaneously when longer target-to-wafer spacing is used. These changes include adjusting RF power levels, gas flow rates, and deposition step durations to compensate for the reduced deposition rate, thereby maintaining overall productivity while achieving improved bottom coverage uniformity.

The patent employs periodic action through multi-step deposition processes where high RF power is applied intermittently. In specific steps, high RF power is used to achieve the desired bottom tungsten thickness, followed by low RF power steps to control wafer temperature and prevent intermixing. This periodic variation in RF power allows the system to achieve both sufficient bottom tungsten thickness and temperature control.

The patent applies parameter changes by dynamically adjusting RF power levels during the deposition process. The system transitions between high and low RF power states based on the deposition phase, using high power when bottom thickness is critical and low power when temperature control is prioritized. This dynamic parameter adjustment resolves the contradiction between achieving sufficient tungsten thickness and preventing wafer heating.