Integrated PVT Sensor Compensation for Process Variation

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Solution Overview

Problem

Semiconductor devices exhibit performance variations due to differences in the semiconductor process, temperature, and supply voltage, leading to inconsistent operation despite being of the same design and manufacture.

Innovation Solution

A sensor system comprising a process sensor, temperature sensor, and voltage sensor integrated into an integrated circuit, which characterizes the semiconductor process and compensates for temperature and voltage variations to ensure consistent performance across devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If semiconductor devices are manufactured using the same fabrication equipment and processing steps, then manufacturing consistency is improved, but performance variations still occur due to minute process differences

Engineering Contradiction:
Improveprocess consistencyVSAvoidperformance consistency
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies preliminary action by incorporating process sensors during manufacturing that characterize the specific process conditions under which each device is formed. This allows the device to preemptively capture its own process fingerprint, which is then stored and used for later compensation, addressing performance variations before they manifest as operational inconsistencies.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements feedback by using the characterized process parameters to adjust and compensate device performance in real-time operation. The system continuously monitors process, voltage, and temperature parameters and uses this feedback to dynamically adjust device operation, ensuring consistent performance despite variations in manufacturing processes or operating conditions.

Inventive Principle:
Principle #23Feedback

2Ease of operation

If devices are operated under identical conditions, then operational consistency is improved, but performance differences persist due to process variations

Engineering Contradiction:
Improveoperational consistencyVSAvoidperformance consistency
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The patent applies parameter changes by dynamically adjusting device operating parameters based on the characterized process parameters and real-time monitoring of voltage and temperature. The system modifies operational parameters such as bias voltages, current levels, and timing characteristics to compensate for process variations, ensuring that devices with different manufacturing histories can operate consistently under their respective conditions.

Inventive Principle:
Principle #35Parameter changes

3Measurement precision

If process sensors are integrated to characterize semiconductor process, then measurement capability is improved, but device complexity increases

Engineering Contradiction:
Improveprocess characterizationVSAvoidsensor integration
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies merging by integrating the process sensor, voltage sensor, temperature sensor, and compensation logic into a single unified PVT sensor module that is co-formed with the semiconductor device. This consolidation reduces the number of separate components and interconnections needed, thereby reducing overall device complexity while maintaining comprehensive measurement and compensation capabilities.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent implements universality by designing a multi-functional PVT sensor module that simultaneously performs process characterization, voltage monitoring, temperature monitoring, and performance compensation. This single module replaces what would otherwise require multiple separate components, reducing device complexity while providing comprehensive functionality for ensuring consistent device operation.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS8049527B2Process, voltage, and temperature sensor
Publication Date: 2011.11.01 SKYWORKS SOLUTIONS INC
  • US8049527B2 patent drawing
  • US8049527B2 patent drawing
  • US8049527B2 patent drawing

AI summary

An integrated circuit includes a process sensor, a temperature sensor, and a voltage sensor. The process sensor is configured to sense a process parameter indicative of a semiconductor process by which the integrated circuit is formed and, based upon the sensed process parameter, to provide a characterization of the semiconductor process to the output of the process sensor. The temperature sensor is configured to provide an indication of a temperature of the integrated circuit to an output of the temperature sensor and the voltage sensor is configured to provide an indication of a power supply voltage level of the integrated circuit to an output of the voltage sensor. The output of the process sensor is coupled to at least one of the temperature sensor and the voltage sensor to compensate at least one of the indication of the temperature and the indication of the power supply voltage level.