PWM Transistor and Current Source in Optoelectronic Light Emitting Device

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Solution Overview

Problem

Conventional LED displays using pulse-width modulation (PWM) have limited dynamic range and analog current dimming capabilities, and are constrained by the limitations of conventional TFT technology in achieving short PWM pulses.

Innovation Solution

An optoelectronic light emitting device comprising a semiconductor component, a current source, and a PWM transistor, where the current source is manufactured using TFT technology and the PWM transistor is made using a higher charge carrier mobility technology like crystalline silicon, allowing for a high dynamic range and cost-effective implementation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional TFT technology is used for the PWM transistor, then manufacturing cost is reduced, but dynamic range and modulation speed are limited

Engineering Contradiction:
Improvemanufacturing costVSAvoidmodulation speed
Core Design Contradiction:
Ease of manufactureVSProductivity

Solution Approach 1:

The device is segmented into two parts manufactured with different technologies: the current source is manufactured with conventional TFT technology for cost-effectiveness, while the PWM transistor is manufactured with crystalline silicon technology for high-speed modulation. This segmentation allows each component to be optimized for its specific function without requiring the entire device to use the more expensive high-performance technology.

Inventive Principle:
Principle #1Segmentation

2Productivity

If crystalline silicon technology is used for the PWM transistor, then dynamic range and modulation speed are improved, but manufacturing cost increases

Engineering Contradiction:
Improvemodulation speedVSAvoidmanufacturing cost
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

High-performance crystalline silicon technology is applied locally only to the PWM transistor where fast switching and high dynamic range are critical for modulation, while the rest of the device (current source) uses conventional TFT technology. This local application of advanced technology optimizes performance where needed while controlling overall manufacturing costs.

Inventive Principle:
Principle #3Local quality

3Adaptability or versatility

If analog current dimming is added to conventional LED displays, then dynamic range is improved, but device complexity increases

Engineering Contradiction:
Improvedynamic rangeVSAvoiddevice complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent replaces complex analog current dimming circuits with a simplified PWM-based control system using a crystalline silicon transistor. The high-speed switching capability of the crystalline silicon device enables precise PWM modulation that achieves wide dynamic range without requiring additional analog dimming circuitry, thereby reducing overall device complexity while maintaining versatility.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Data Source

PatentUS11475829B2Optoelectronic light emitting device with a PWM transistor and method for manufacturing or controlling an optoelectronic light emitting device
Publication Date: 2022.10.18 OSRAM OPTO SEMICON GMBH & CO OHG
  • US11475829B2 patent drawing
  • US11475829B2 patent drawing
  • US11475829B2 patent drawing

AI summary

An optoelectronic light emitting device includes an optoelectronic semiconductor component configured to generate light, a current source configured to generate a current, and a PWM transistor driven by a pulse-width modulated signal. The PWM transistor enters a first state or a second state based on said pulse-width modulated signal. The PWN transistor is configured to supply the optoelectronic semiconductor component with the current generated by the current source in the first state and to decouple it from the current generated by the current source in the second state. The current source is manufactured by a first technology and the PWM transistor is manufactured by a second technology.