Pyramidal EMI Shielding Layer for Thinner Semiconductor Packages
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in reducing electromagnetic interference (EMI) due to high-speed digital and RF electronic components, which can degrade circuit performance and increase device size and cost with thicker shielding layers.
Innovation Solution
A semiconductor device with an EMI shielding layer featuring protrusions having inclined sidewalls, which reflect and absorb electromagnetic waves, trapping them and enhancing shielding performance without increasing the shielding layer thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thicker EMI shielding layer is used to reduce electromagnetic interference, then shielding performance is improved, but device size and manufacturing cost increase
Solution Approach 1:
The patent applies curvature by forming the EMI shielding layer with a domed or arched profile instead of a flat configuration. This curved geometry increases the path length of electromagnetic waves traversing the shielding layer, enhancing EMI rejection performance. The domed structure is formed using reflow processing where the shielding layer is heated above the melting point of the underfill material, causing it to naturally dome due to capillary forces and surface tension effects.
Solution Approach 2:
The patent changes the physical state and geometry parameters of the EMI shielding layer by controlling the reflow process. By adjusting reflow temperature, time, and cooling rate, the domed profile height and curvature radius can be precisely controlled. This parameter optimization allows achieving maximum EMI shielding with minimal thickness increase, directly addressing the contradiction between shielding performance and device size.
2Reliability
If a thicker EMI shielding layer is used to reduce electromagnetic interference, then shielding performance is improved, but manufacturing cost increases
Solution Approach 1:
The EMI shielding layer performs self-shaping during the reflow process without requiring additional manufacturing steps or equipment. The same reflow process used to assemble the package components also automatically forms the domed profile of the shielding layer. This self-service approach eliminates the need for separate doming equipment, tooling, and process control systems, thereby reducing manufacturing complexity and cost while achieving enhanced EMI shielding performance.
3Adaptability or versatility
If electronic components are integrated to increase functionality, then device performance is improved, but electromagnetic interference increases
Solution Approach 1:
The domed EMI shielding layer acts as an intermediary barrier between high-speed digital/RF components that generate electromagnetic interference and sensitive analog or RF circuits that are vulnerable to interference. The curved geometry of the domed structure enhances the shielding effect by increasing the reflection and absorption of electromagnetic waves, effectively mediating the electromagnetic interaction between different circuit blocks within the package while allowing all components to coexist in a compact integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces EMI by reflecting and absorbing electromagnetic waves, improving shielding performance while maintaining a thinner shielding layer, thus addressing the challenges of device size and cost.
Implementation Method 1
a first electromagnetic interference (EMI) shielding layer disposed on the first encapsulant, wherein the first EMI shielding layer includes a first plurality of shield protrusions each having one or more inclined sidewalls
Implementation Method 2
reflect and absorb electromagnetic waves, trapping them and enhancing shielding performance
Data Source
AI summary
A semiconductor device and a method for making the same are provided. The semiconductor device includes: a substrate; an electronic component mounted on the substrate; a first encapsulant disposed on the substrate and encapsulating the electronic component; and a first electromagnetic interference (EMI) shielding layer disposed on the first encapsulant, wherein the first EMI shielding layer includes a first plurality of shield protrusions each having one or more inclined sidewalls.