Pyrene-Based Hardmask Composition for Nanoscale Pattern Etch Resistance
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Solution Overview
Problem
Current lithographic techniques face challenges in forming fine patterns of several to several tens of nanometer sizes due to inadequate etch resistance and solubility issues in semiconductor manufacturing, which affects the precision and reliability of pattern formation.
Innovation Solution
A hardmask composition comprising a solvent and a polymer with a structural unit including a substituted or unsubstituted dihydroxypyrene moiety and a pyrenyl group, which forms a condensed polycyclic aromatic hydrocarbon layer upon curing, enhancing solubility and etch resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional photoresist and etching techniques are used, then pattern formation can be achieved, but etch resistance is insufficient for fine patterns of several to tens of nanometers
Solution Approach 1:
The patent uses a composite material system consisting of a hardmask layer (formed from the pyrene-based polymer composition) and a photoresist layer. The hardmask layer provides the necessary etch resistance for fine patterns, while the photoresist layer enables precise pattern definition. This composite approach allows each layer to fulfill its specific function, resolving the contradiction between etch resistance and pattern precision.
Solution Approach 2:
The hardmask layer acts as an intermediary between the photoresist layer and the underlying material layer. It receives the pattern from the photoresist and transfers it to the material layer through etching, while providing the necessary mechanical strength and etch resistance. This intermediary function enables the system to achieve both high etch resistance and fine pattern precision.
2Reliability
If the hardmask layer is made denser to improve etch resistance, then solubility and processing become more difficult
Solution Approach 1:
The patent achieves high etch resistance through specific chemical composition parameters rather than simply increasing density. The pyrene-based polymer with specific molecular weight, functional groups, and compositional ratios provides high etch resistance while maintaining appropriate solubility for processing. By controlling parameters like polymer molecular weight, solvent type, and compositional ratios, the hardmask layer achieves optimal balance between etch resistance and processability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition improves etch resistance and layer density, enabling the formation of precise patterns with high carbon content and improved resistance against CFx etching gas, thus addressing the limitations of existing techniques.
Implementation Method 1
a hardmask layer and method of forming patterns comprising a cured product of the hardmask composition
Implementation Method 2
The cured product may include a condensed polycyclic aromatic hydrocarbon
Implementation Method 3
improving etch resistance... improved resistance against CFx etching gas
Data Source
AI summary
A hardmask composition, a hardmask layer, and a method of forming patterns, the composition including a solvent; and a polymer including a structural unit represented by Chemical Formula 1,wherein, in Chemical Formula 1, A is a substituted or unsubstituted dihydroxypyrene moiety, and E is a substituted or unsubstituted pyrenyl group.