Pyroelectric Temperature Sensor Integrated Semiconductor Channel
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Solution Overview
Problem
Conventional pyroelectric temperature sensors have limited amplification characteristics and require complex external circuits for drain current detection, making them less sensitive and cumbersome for temperature measurement.
Innovation Solution
A pyroelectric temperature sensor design featuring a stacked structure of a lower electrode group, a ferroelectric layer, a semiconductor layer, and an upper electrode group, with specific channel configurations and polarization directions, allowing for the calculation of temperature using an output voltage equation that incorporates resistance values of different channels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a conventional pyroelectric temperature sensor structure is used, then the sensor can detect temperature changes, but the amplification characteristic is limited and the detection circuit is complicated
Solution Approach 1:
The patent merges the pyroelectric body, semiconductor layer, and electrode structure into an integrated device. The semiconductor layer is formed directly on the pyroelectric body, and the source/drain electrodes are integrated with the pyroelectric structure, eliminating the need for separate external detection circuits and achieving both high sensitivity and structural simplicity
Solution Approach 2:
The patent introduces a semiconductor layer as an intermediary between the pyroelectric body and the electrode structure. This semiconductor layer acts as a mediator that converts temperature-induced pyroelectric effects into measurable electrical signals with high amplification, while the integrated structure eliminates complex external circuit requirements
2Volume of moving object
If the sensor size is reduced, then the sensor becomes more compact, but maintaining high sensitivity becomes more difficult
Solution Approach 1:
The patent optimizes critical parameters including the thickness of the pyroelectric body (50-200 nm), semiconductor layer thickness (10-50 nm), and channel width (1-10 μm) to maintain high sensitivity in a miniaturized structure. By precisely controlling these dimensional parameters, the sensor achieves both small size and high temperature detection sensitivity
Solution Approach 2:
The patent uses a composite structure combining pyroelectric material (such as Pb(Zr,Ti)O3 or Pb1-xLaxZr1-yTiyO3) with semiconductor material (such as ZnO or In2O3). This composite structure enables the miniaturized sensor to maintain high sensitivity by leveraging the synergistic properties of both materials in a compact integrated design
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances sensitivity and simplifies temperature measurement by using a small pyroelectric temperature sensor, capable of accurately calculating temperature with high sensitivity and stability across a wide range, from -200°C to 150°C, with improved output voltage changes.
Implementation Method 1
By the pyroelectric effect due to temperature change, a potential at the position near the interface between the pyroelectric film 101 and the semiconductor layer 103 is modulated.
Data Source
AI summary
A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode.