Pyrotechnic Semiconductor Bypass Switching for Microsecond Short Circuits
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Solution Overview
Problem
Existing mechanically operating pyrotechnic bypass switches in power electronics systems, such as converter arrangements and voltage stabilization devices, struggle with slow switching times and limited capability to withstand short-circuit energies.
Innovation Solution
A short-circuit switching device incorporating a semiconductor element with a p-n junction and a pyrotechnic ignition device, where the pyrotechnic ignition destroys at least one p-n junction upon explosion, making it conductive and eliminating the need for movable mechanical parts, thereby achieving rapid switching times and enhanced resistance to short-circuit energies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If mechanically operating pyrotechnic bypass switches are used, then switching times of less than one millisecond can be achieved, but the switching times are still too slow for applications requiring microsecond-range switching
Solution Approach 1:
The patent replaces the mechanically operating bypass switch with a semiconductor-based switching device. The pyrotechnic ignition device destroys the semiconductor element's p-n junction, causing a phase change from blocking to conductive state without any mechanical movement. This substitution of mechanical operation with a chemical-physical destruction process achieves microsecond-range switching times, resolving the contradiction between achieving fast switching and eliminating mechanical limitations.
Solution Approach 2:
The invention utilizes a phase transition in the semiconductor element's electrical state. The pyrotechnic ignition causes the semiconductor material to transition from a blocking state (intact p-n junction) to a conductive state (destroyed p-n junction). This abrupt phase change in electrical conductivity, triggered by pyrotechnic energy, enables extremely fast switching times in the microsecond range, overcoming the millisecond limitations of mechanical systems.
2Device complexity
If mechanically operating bypass switches are used, then the device structure is relatively simple, but the device cannot withstand high short-circuit energies
Solution Approach 1:
The patent employs a composite structure combining a semiconductor element with specific p-n junction configuration and a pyrotechnic ignition device. The semiconductor element is designed with multiple doped regions (n-doped and p-doped) forming series p-n junctions, creating a composite material system that can absorb and withstand high short-circuit energies. The pyrotechnic ignition device integrates with this semiconductor structure, forming a composite switching system that maintains structural simplicity while achieving enhanced energy withstand capability through the combined properties of its components.
3Ease of operation
If movable mechanical parts are used in bypass switches, then the device can be operated, but the switching times remain in the millisecond range rather than microsecond range
Solution Approach 1:
The patent eliminates movable mechanical parts entirely by using a semiconductor element that switches state through pyrotechnic ignition-induced destruction of the p-n junction. The switching action is achieved through a chemical-physical process (pyrotechnic explosion and subsequent semiconductor destruction) rather than mechanical movement. This substitution maintains ease of operation through pyrotechnic triggering while reducing switching time from milliseconds to microseconds by removing mechanical inertia and movement constraints.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables particularly fast switching times in the microsecond range and improved resistance to short-circuit energies, ensuring reliable operation without mechanical parts.
Implementation Method 1
the semiconductor element is at least partially destroyed, namely at least with respect to the at least one p-n junction, and is made at least partially conductive regardless of the current flow direction by the explosion gas released by the ignition device after an explosion
Data Source
AI summary
A short-circuit switching device, in particular a bypass switch, includes a semiconductor element with at least one p-n junction and at least one pyrotechnic ignition device. The semiconductor element is or at least can be in a blocking state prior to the ignition of the pyrotechnic ignition device on the basis of the involvement of the p-n junction. After the ignition of the pyrotechnic ignition device, the semiconductor element is at least partially destroyed, namely at least with respect to the at least one p-n junction, and made at least partially conductive independently of the current flow direction by using explosion gas released by the ignition device after an explosion.