Quantum-cascade laser cladding thickness for heat dissipation

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Solution Overview

Problem

Quantum-cascade laser elements face challenges in heat dissipation and suppression of high-order mode oscillation, particularly when driven to continuously oscillate laser light with short wavelengths in the mid-infrared region, as existing technologies struggle to effectively manage heat and suppress unwanted mode oscillations.

Innovation Solution

The quantum-cascade laser element incorporates a semiconductor mesa with an active layer and an embedding layer, where the cladding layer is thinner in regions outside the mesa, and a metal layer extends over both regions, enhancing heat dissipation and suppressing high-order mode oscillation by absorbing light in these areas.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If an embedding layer is provided to improve heat dissipation, then heat dissipation is improved, but light confinement effect is weakened causing high-order mode oscillation

Engineering Contradiction:
Improveheat dissipationVSAvoidlight confinement effect
Core Design Contradiction:
TemperatureVSStability of the object's composition

Solution Approach 1:

The cladding layer is configured with different thicknesses in different regions: a first thickness in the first region (overlapping the semiconductor mesa) and a second thickness (greater than the first thickness) in the second region (outside the first region). This local variation in thickness provides enhanced light confinement in the outer regions without compromising the heat dissipation function of the embedding layer, thereby resolving the contradiction between heat dissipation and light confinement effect.

Inventive Principle:
Principle #3Local quality

2Stability of the object's composition

If the cladding layer thickness is increased to suppress high-order mode oscillation, then light confinement is improved, but heat dissipation capability is reduced

Engineering Contradiction:
Improvelight confinement effectVSAvoidheat dissipation
Core Design Contradiction:
Stability of the object's compositionVSTemperature

Solution Approach 1:

The cladding layer is segmented into different thickness regions: a thinner first region directly over the semiconductor mesa that allows heat dissipation, and a thicker second region in the outer areas that provides light confinement to suppress high-order mode oscillation. This segmentation allows each region to perform its optimized function without interfering with the other.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration improves heat dissipation and effectively suppresses high-order mode oscillation, maintaining stability and efficiency even when continuously oscillating laser light with wavelengths between 4 μm to 6 μm, thereby enhancing the performance and yield of the quantum-cascade laser device.

Implementation Method 1

the light of the high-order mode can be absorbed by the metal layer formed to reach the second region, and the oscillation of the high-order mode can be suppressed

Methodology Applied
Scientific EffectOptical absorption: Absorption (EM radiation)

Implementation Method 2

heat generated in the active layer can be effectively dissipated

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20230148134A1Quantum-cascade laser element and quantum-cascade laser device
Publication Date: 2023.05.11 HAMAMATSU PHOTONICS KK
  • US20230148134A1 patent drawing
  • US20230148134A1 patent drawing
  • US20230148134A1 patent drawing

AI summary

A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor mesa formed on the semiconductor substrate to include an active layer having a quantum-cascade structure and to extend along a light waveguide direction; an embedding layer formed to interpose the semiconductor mesa along a width direction of the semiconductor substrate; a cladding layer formed at least on the semiconductor mesa; and a metal layer formed at least on the cladding layer. A thickness of the cladding layer is thinner in a second region located outside a first region in the width direction of the semiconductor substrate than in the first region of which at least a part overlaps the semiconductor mesa when viewed in a thickness direction of the semiconductor substrate. The metal layer extends over the first region and the second region.