Quantum Dot LED Barrier Structure for Moisture Isolation

The patent applies thin film encapsulation using alternating organic and inorganic barrier layers deposited on the quantum dot layer. The inorganic layers (such as aluminum oxide, zirconium oxide, or silicon oxide) provide impermeable barriers to water and oxygen, while the organic layers provide adhesion and stress relief. This multi-layer thin film structure effectively prevents water and oxygen penetration, solving the contradiction between ease of manufacture and maintaining fluorescence efficiency.

The patent employs composite barrier structures combining different materials with complementary properties. The alternating organic and inorganic layers create a composite system where each material contributes its strengths: inorganic layers provide low permeability to water and oxygen, while organic layers provide flexibility and adhesion. This composite approach enables effective protection of quantum dots while maintaining manufacturability.

The patent segments the barrier protection into multiple thin alternating layers of organic and inorganic materials rather than using a single thick barrier. This segmentation allows each layer to be thin and specialized in function, achieving effective protection while keeping individual layer complexity low and enabling standard deposition processes.

The use of thin film technology allows the complex multi-layer barrier structure to be deposited in a compact and integrated manner using conventional semiconductor fabrication processes. The thin films can be deposited sequentially in a single manufacturing run, minimizing process complexity despite the multi-layer structure.