QLED Core-Shell Quantum Dot Energy Level Inversion

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Solution Overview

Problem

Current QLED device structures based on OLED theoretical systems fail to simultaneously improve photovoltaic efficiency and lifetime performance, as they lead to charge imbalance and irreversible damage due to excessive hole injection in stable operating states.

Innovation Solution

Incorporating a quantum dot light-emitting layer with a core-shell structure and adjusting the energy level difference between the valence band of the shell material and the hole transport material to ≥0.5 eV to balance hole and electron injection, and using a hole injection layer with a reduced energy barrier to prevent charge accumulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If classical OLED device structures and material selection principles are applied to QLED devices, then device efficiency is improved, but service life deteriorates significantly

Engineering Contradiction:
Improvedevice efficiencyVSAvoidservice life
Core Design Contradiction:
PowerVSDuration of action of stationary object

Solution Approach 1:

The patent changes the energy level parameter relationship between functional layers. Specifically, it inverts the conventional energy level arrangement by making the electron transport layer have a deeper LUMO level than the light-emitting layer, and the hole transport layer have a shallower HOMO level than the light-emitting layer. This parameter inversion resolves the contradiction by preventing excessive hole injection while maintaining efficient electron injection, thus improving both efficiency and service life simultaneously

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies inversion principle by reversing the conventional energy level arrangement. Instead of the light-emitting layer having deeper energy levels than transport layers (as in OLED), the QLED structure inverts this relationship. The electron transport layer's LUMO is deeper than the light-emitting layer's LUMO, and the hole transport layer's HOMO is shallower than the light-emitting layer's HOMO. This inversion corrects the charge imbalance problem that causes reduced service life while maintaining high efficiency

Inventive Principle:
Principle #13The other way round (Inversion)

2Productivity

If energy level matching follows OLED theoretical system, then charge injection efficiency is improved, but charge imbalance occurs in stable operating states

Engineering Contradiction:
Improvecharge injection efficiencyVSAvoidcharge balance
Core Design Contradiction:
ProductivityVSStability of the object's composition

Solution Approach 1:

The patent changes the energy level parameters of transport layers relative to the light-emitting layer. The electron transport layer is designed with LUMO level deeper than the light-emitting layer's LUMO, and the hole transport layer with HOMO level shallower than the light-emitting layer's HOMO. This parameter adjustment maintains high charge injection efficiency while preventing charge imbalance during stable operation

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies different energy level characteristics to different functional layers locally. The electron transport layer has deeper energy levels to facilitate electron injection, while the hole transport layer has shallower energy levels to limit hole injection. This local differentiation of energy level properties achieves both high injection efficiency and stable charge balance

Inventive Principle:
Principle #3Local quality

3Productivity

If hole injection barrier is reduced to improve carrier injection, then injection efficiency is improved, but irreversible damage occurs due to excessive hole injection

Engineering Contradiction:
Improvecarrier injection rateVSAvoiddevice stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies different energy level characteristics to different functional layers. The electron transport layer has deeper LUMO level to maintain high electron injection, while the hole transport layer has shallower HOMO level to create a barrier against excessive hole injection. This local differentiation protects device reliability while maintaining acceptable carrier injection rates

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent inverts the conventional energy level parameters: the hole transport layer's HOMO level is set shallower than the light-emitting layer's HOMO, creating an energy barrier that prevents excessive hole injection and the associated irreversible damage, while electron injection remains efficient due to the deeper electron transport layer LUMO level

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach balances carrier injection, enhances recombination efficiency, and extends the lifetime of QLED devices by reducing irreversible damage and maintaining efficiency in stable operating states.

Implementation Method 1

the quantum dot material has a top energy level difference between a valence band of a shell layer material and a valence band of a hole transport material in the hole transport layer is greater than or equal to 0.5 eV

Methodology Applied
Scientific EffectEnergy level difference:

Implementation Method 2

QLED is similar to organic light-emitting display (OLED), which is an active light-emitting technology

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS20240107790A1Optoelectronic device
Publication Date: 2024.03.28 TCL TECHNOLOGY GROUP CORPORATION
  • US20240107790A1 patent drawing
  • US20240107790A1 patent drawing
  • US20240107790A1 patent drawing

AI summary

The present application discloses an optoelectronic device, including an anode, a hole transport layer disposed on the anode, a quantum dot light-emitting layer disposed on the hole transport layer, and a cathode disposed on the quantum dot light-emitting layer; the quantum dot light-emitting layer includes a quantum dot material in a core-shell structure, and a difference between a top energy level of a valence band of an outer shell layer material of the quantum dot material and that of a hole transport material in the hole transport layer is greater than or equal to 0.5 eV.