QLED Interface Modification Layers for Lower Turn-On Voltage
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Solution Overview
Problem
Quantum Dot Light Emitting Diodes (QLEDs) face a high energy level barrier between the electron/hole transport layer and the light emitting layer, resulting in a high turn-on voltage.
Innovation Solution
Incorporating a first and/or second interface modification layer between the light emitting layer and the electron/hole transport layers, with energy levels matching those of the light emitting layer and the respective transport layers, to reduce electron and hole injection barriers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If quantum dot light emitting diodes are constructed with conventional electron/hole transport layers and light emitting layers, then the device structure is simple and easy to manufacture, but the energy level barrier between layers is high resulting in high turn-on voltage
Solution Approach 1:
The patent introduces interface modification layers as intermediary components between the electron transport layer and light emitting layer, and between the hole transport layer and light emitting layer. These interface modification layers have energy levels that are intermediate between the adjacent layers, serving as energy bridges to facilitate charge carrier injection and reduce the turn-on voltage without complicating the overall device structure or manufacturing process
2Reliability
If interface modification layers are added to reduce energy level barriers, then the turn-on voltage is reduced and efficiency is improved, but the device structure becomes more complex
Solution Approach 1:
The patent applies interface modification layers only at specific critical interfaces where energy level mismatches occur (between electron transport layer and light emitting layer, and between hole transport layer and light emitting layer), rather than throughout the entire device. This localized approach reduces turn-on voltage and improves efficiency while minimizing the increase in device complexity by targeting only the necessary locations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of interface modification layers reduces the turn-on voltage of the electroluminescent device and enhances its efficiency by improving electron and hole injection.
Implementation Method 1
an energy level of the first interface modification layer matches an energy level of the light emitting layer and an energy level of the one of the hole transport layer and the electron transport layer
Implementation Method 2
Quantum Dot Light Emitting Diodes (QLEDs) have the advantages of such as high brightness
Data Source
AI summary
An electroluminescent device, a manufacturing method thereof, and a display apparatus are provided. The electroluminescent device includes an anode layer, a light emitting layer, a cathode layer, a hole transport layer located between the anode layer and the light emitting layer, and a electron transport layer located between the cathode layer and the light emitting layer. The electroluminescent device further includes: a first interface modification layer between the light emitting layer and one of the hole transport layer and the electron transport layer; wherein an energy level of the first interface modification layer matches an energy level of the light emitting layer and an energy level of the one of the hole transport layer and the electron transport layer.