Quadrangle Spiral Transformer on Semiconductor Substrate

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Solution Overview

Problem

The existing techniques for manufacturing transformers using semiconductor substrates, particularly those involving electrolytic growth processes, are inefficient and not suitable for widespread application in semiconductor devices, as they do not align with conventional wiring formation processes.

Innovation Solution

A method involving the lamination of insulating layers and conductor films on semiconductor substrates using vacuum deposition, chemical vapor deposition, or sputtering to form quadrangle spiral-shaped winding conductors, which are magnetically coupled and spaced within the insulating layer, allowing for efficient manufacturing similar to semiconductor device wiring processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If electrolytic growth process is used to form transformer windings, then transformer structure can be formed, but manufacturing efficiency is reduced and process complexity increases

Engineering Contradiction:

Improveease of manufactureVSAvoidmanufacturing efficiency

Core Design Contradiction:

Ease of manufactureVSProductivity

Solution Approach 1:

The patent replaces the electrolytic growth process with a vacuum deposition process to form conductor films. This substitution eliminates the need for complex electrolytic growth equipment and processes, using instead standard vacuum deposition techniques already established in semiconductor manufacturing, thereby improving ease of manufacture while maintaining productivity

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent uses vacuum deposition, a universal process already widely employed in semiconductor device fabrication for forming various conductor layers. This multi-functional approach allows the same deposition equipment and process knowledge to be used for transformer winding formation as well as other semiconductor interconnect structures, eliminating the need for specialized electrolytic growth infrastructure

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Ease of manufacture

If electrolytic growth process is used to form transformer windings, then transformer structure can be formed, but device complexity increases

Engineering Contradiction:

Improveease of manufactureVSAvoidprocess complexity

Core Design Contradiction:

Ease of manufactureVSDevice complexity

Solution Approach 1:

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent divides the transformer structure into discrete conductor films formed by vacuum deposition, insulating films formed by standard deposition techniques, and contact vias formed by photolithography and etching. This segmentation allows each component to be formed using optimized, independent processes rather than a single complex electrolytic growth process, reducing overall device complexity

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances manufacturing efficiency, reduces costs, and allows for precise adjustment of transformer parameters, such as width and winding numbers, thereby improving signal transmission capacity and temperature tolerance.

Implementation Method 1

laminating a first conductor film on the lower insulating layer by a vacuum deposition method, a chemical vapor deposition method or sputtering

Methodology Applied

Scientific EffectVacuum deposition: Physical Vapour Deposition

Implementation Method 2

laminating a first conductor film on the lower insulating layer by a vacuum deposition method, a chemical vapor deposition method or sputtering

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 3

laminating a first conductor film on the lower insulating layer by a vacuum deposition method, a chemical vapor deposition method or sputtering

Methodology Applied

Scientific EffectSputtering: Sputtering

Implementation Method 4

The secondary winding conductor is magnetically coupled with the primary winding conductor

Methodology Applied

Scientific EffectElectromagnetic induction: Electromagnetic Induction

Data Source

PatentUS11114377B2Transformer, transformer manufacturing method and semiconductor device

Publication Date: 2021.09.07 MITSUBISHI ELECTRIC CORP

AI summary

A semiconductor device includes a semiconductor substrate, an insulating layer, a transformer formed in the insulating layer, and a wiring. The transformer includes a primary winding conductor, and a secondary winding conductor. The primary winding conductor is provided in a quadrangle spiral shape having a first center axis extending in a direction parallel to the surface of the semiconductor substrate inside the insulating layer, and configured by one conductor film selected from a group consisting of a vacuum deposition film, a chemical vapor deposition film and a sputtered film. The secondary winding conductor is provided in a quadrangle spiral shape having a second center axis inside the insulating layer while being spaced from the primary winding conductor in plan view of the semiconductor substrate, magnetically coupled with the primary winding conductor and configured by a conductor film.