Quadrant Memory Circuit Architecture for High-Frequency RC Reduction
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Solution Overview
Problem
Current CPU architectures face challenges in achieving a balance between performance, power, and area (PPA) due to the resistive-capacitive (RC) effect at high frequencies, leading to inefficiencies in memory performance and increased complexity in wordline routing.
Innovation Solution
A memory architecture is introduced that uses quadrants arranged around a bank control component, providing symmetry about axes parallel and perpendicular to wordlines, reducing the number of bank control components and repeater circuits, and employing a global bank controller to pre-decode addresses and control row decoders for efficient read and write operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If wide I/O memory instances operate at high frequencies (3 GHz and above), then memory bandwidth and throughput are improved, but resistive capacitive (RC) effects increase causing performance degradation
Solution Approach 1:
The memory circuit is divided into multiple quadrants (first quadrant, second quadrant, third quadrant, fourth quadrant) arranged around a central bank control component. Each quadrant contains its own bit cell core and I/O circuits, allowing independent operation and reducing the RC effect by limiting the distance signals must travel within each operational unit.
2Reliability
If larger memory circuit instances are broken into smaller memory circuit instances, then RC effect is reduced and performance is improved, but hardware duplication increases causing leakage penalty and area penalty
Solution Approach 1:
Multiple quadrant memory circuits are merged into a single integrated memory device with a shared bank control component at the center. The quadrants are arranged around this common control unit, allowing the memory to function as one unified device while maintaining the performance benefits of smaller, distributed memory units. This eliminates the need for separate control components for each quadrant.
3Adaptability or versatility
If routing tracks are used to merge the memories, then memory instances can be combined, but the routing tracks themselves incur additional RC effect
Solution Approach 1:
The memory quadrants are arranged in a spatial configuration around the central bank control component, transitioning from a linear or planar routing approach to a radial/dimensional arrangement. This spatial reorganization reduces the length and complexity of routing tracks by positioning memory units equidistantly around the control unit, thereby minimizing the RC effect in interconnect pathways.
4Adaptability or versatility
If repeaters are used to support multiple memory circuits arranged horizontally, then memory expansion is enabled, but speed decreases and wordline routing complexity increases
Solution Approach 1:
The memory device is segmented into multiple quadrants that can be independently activated through the shared bank control component. This segmentation allows memory expansion without requiring repeaters, as each quadrant can be accessed independently through the central control unit, maintaining high-speed operation while enabling flexible memory configuration.
Data Source
AI summary
A semiconductor device includes: a memory circuit having a plurality of quadrants arranged at corners of the memory circuit and surrounding a bank control component; wherein a first quadrant of the plurality of quadrants includes a first bit cell core and a first set of input output circuits configured to access the first bit cell core, the first quadrant defined by a rectangular boundary that encloses portions of two perpendicular edges of the memory circuit; wherein a second quadrant of the plurality of quadrants includes a second bit cell core and a second set of input output circuits configured to access the second bit cell core, the second quadrant being adjacent the first quadrant, wherein a border between the first quadrant and the second quadrant defines a first axis about which the first quadrant and the second quadrant are symmetrical.