Quantized Nanoscale Thin Film Structure for Thickness Control

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Solution Overview

Problem

Existing methods for depositing thin films at nanoscale thicknesses often result in manufactured device performance that differs from the designed performance, especially when the thickness approaches the lattice constant.

Innovation Solution

A nanoscale thin film structure is designed with quantized thickness, where the thin film layer is deposited to a minimum unit thickness corresponding to an integer multiple, using either physical or chemical vapor deposition methods, to ensure precise control over the growth process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional thin film deposition methods are used to achieve nanoscale thickness, then the thin film can be deposited, but the manufactured device performance differs from the designed performance

Engineering Contradiction:
Improvethin film thickness precisionVSAvoiddevice performance consistency
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies parameter changes by quantizing the thin film thickness to discrete values based on the lattice constant of the substrate material. Instead of using continuous thickness values, the film thickness is designed as integer multiples of the lattice constant (e.g., 1nml, 2nml, 3nml where l is the lattice constant). This discrete parameter approach ensures that the deposited thin film maintains crystallographic alignment with the substrate, eliminating performance deviations caused by thickness variations at the nanoscale.

Inventive Principle:
Principle #35Parameter changes

2Length of moving object

If thin film thickness is reduced to approach the lattice constant, then the nanoscale device performance can be enhanced, but the control over growth process becomes difficult

Engineering Contradiction:
Improvethin film thicknessVSAvoidgrowth process control
Core Design Contradiction:
Length of moving objectVSEase of manufacture

Solution Approach 1:

The patent transforms the continuous thickness parameter into a discrete quantized parameter system. The thin film thickness is defined as T = n × l, where n is an integer and l is the lattice constant of the substrate. This parameter transformation provides clear manufacturing guidelines: deposit exactly one, two, three, or more unit cells thickness. Such quantized parameters are much easier to control and reproduce in manufacturing compared to continuous nanoscale dimensions.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent segments the thin film thickness into discrete unit cell layers based on the crystal lattice structure. Each unit layer corresponds to one lattice constant thickness, and the total thickness is an integer multiple of these unit layers. This segmentation approach allows manufacturers to control growth by targeting specific numbers of unit cells, making the manufacturing process more manageable and less sensitive to minor deposition rate variations.

Inventive Principle:
Principle #1Segmentation

3Adaptability or versatility

If continuous thickness design is used for thin film, then design flexibility is maintained, but the actual deposited thickness cannot be precisely controlled

Engineering Contradiction:
Improvedesign flexibilityVSAvoiddeposited thickness accuracy
Core Design Contradiction:
Adaptability or versatilityVSMeasurement precision

Solution Approach 1:

The patent changes the thickness parameter from continuous to discrete quantized values. Instead of designing arbitrary continuous thickness values, the design space is restricted to discrete values T = n × l where n = 1, 2, 3, ... and l is the lattice constant. This parameter change maintains design flexibility within the quantized framework, as engineers can still select from multiple discrete options (1nml, 2nml, 3nml, etc.) depending on device requirements, while ensuring each selected value can be precisely realized through controlled deposition of integer numbers of unit cell layers.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for the implementation of devices with performance matching the designed specifications, by controlling the growth rate and maintaining a flat surface with minimized crystal nuclei growth.

Implementation Method 1

The thin film layer is deposited using a physical vapor deposition method or a chemical vapor deposition method

Methodology Applied
Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Implementation Method 2

The thin film layer is deposited using a physical vapor deposition method or a chemical vapor deposition method

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 3

crystals are formed through thermal decomposition and chemical reaction and are deposited on the substrate

Methodology Applied
Scientific EffectThermal decomposition: Pyrolysis

Implementation Method 4

crystals are formed through thermal decomposition and chemical reaction and are deposited on the substrate

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 5

a deposition method using a phenomenon in which a monoatomic layer is chemically attached

Methodology Applied
Scientific EffectChemical attachment: Chemical Bonding

Data Source

PatentUS12205986B2Nanoscale thin film structure and implementing method thereof
Publication Date: 2025.01.21 KOREA ADVANCED NANO FAB CENT
  • US12205986B2 patent drawing
  • US12205986B2 patent drawing
  • US12205986B2 patent drawing

AI summary

A nanoscale thin film structure and implementing method thereof, and, more specifically, a nanoscale thin film structure of which target structure is designed with quantized thickness, and a method to implement the nanoscale thin film structure by which the performance of the manufactured nanodevice can be implemented the same as the designed performance, thereby applicable to high sensitivity high performance electronic/optical sensor devices.