Quantum Chip I/O Transmission Line Layout for Dense Wiring
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Solution Overview
Problem
Existing quantum computing technologies face challenges in achieving high-density wiring to efficiently connect a large number of I/O ports from a quantum chip during packaging, particularly due to the structural limitations imposed by pad sizes in linear transmission lines.
Innovation Solution
The quantum device employs transmission lines on a superconducting substrate divided into sections forming an included angle, with pads distributed away from the quantum chip, allowing for higher density wiring by reducing the impact of pad size on spacing and increasing the density of transmission lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If linear transmission lines with pads are used to connect I/O ports, then connectivity is achieved, but wiring density is limited due to pad size constraints
Solution Approach 1:
The transmission line is divided into multiple sections (first section, second section, third section) with different orientations. This segmentation allows each section to be optimized independently, enabling higher wiring density by reducing the impact of pad size on overall spacing requirements.
Solution Approach 2:
The transmission line transitions from a single-dimensional linear path to a multi-dimensional configuration with sections at different angles (0 degree, 45 degree, and other orientations). This dimensional change allows more efficient space utilization on the substrate, increasing the number of I/O ports that can be connected within the same area.
2Quantity of substance
If pad size is reduced to increase wiring density, then more I/O ports can be connected, but signal crosstalk increases
Solution Approach 1:
Different sections of the transmission line are assigned different orientations (0 degree, 45 degree, etc.) to optimize local signal transmission characteristics. This local quality variation ensures that each section contributes to minimizing crosstalk while maintaining overall high wiring density.
Solution Approach 2:
The transmission line employs angular transitions and curved path sections instead of straight linear paths. This curvature and angular variation helps distribute electromagnetic fields more evenly, reducing signal crosstalk between adjacent transmission lines while maintaining compact spacing.
3Quantity of substance
If transmission lines are arranged in high density, then more I/O ports are led out, but manufacturing precision requirements increase
Solution Approach 1:
The transmission line configuration uses asymmetric angular orientations (0 degree, 45 degree, and other non-uniform angles) rather than uniform spacing. This asymmetric arrangement creates unique geometric fingerprints for each transmission line path, making alignment more robust and easier to manufacture with standard precision tolerances.
Solution Approach 2:
By dividing the transmission line into multiple sections with distinct orientations, the manufacturing process can focus on creating precise angles at junction points rather than maintaining uniform precision along the entire length. This segmentation approach simplifies manufacturing while achieving high wiring density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient high-density wiring of a large number of I/O ports, reducing signal crosstalk and increasing the packing density of transmission lines, thereby facilitating better connectivity between the quantum chip and peripheral circuits.
Implementation Method 1
a superconducting substrate, provided with transmission lines on the superconducting substrate
Data Source
AI summary
A quantum device includes: a quantum chip, provided with an I/O port; and a superconducting substrate, provided with transmission lines on the superconducting substrate. Each of the transmission lines includes a first section and a second section that form an included angle, a bonding connection structure is formed between one end of the first section and the I/O port, a pad for connecting to a connector is formed at one end of the second section, and a distribution spacing between the first sections is smaller than a distribution spacing between the second sections. The second sections are distributed in a region away from the quantum chip. The first section connected to the 1/0 port via aluminum wire bonding can be wired at higher density. The size of the pad on a wiring spacing is reduced, and density of the transmission lines on the superconducting substrate is increased.