Quantum Dot Patterning via ALD Precursor Crosslinking

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Solution Overview

Problem

Existing quantum dot light emitting diode (QD-LED) manufacturing processes face challenges in applying photolithography due to the low solvent resistance of quantum dots coated with organic ligands, leading to low yield and unsuitability for semiconductor processes.

Innovation Solution

The introduction of a photolithography process involving atomic layer deposition (ALD) precursors to crosslink quantum dots, replacing organic ligands with diethylzinc (DEZ) or trimethylaluminum (TMA), and oxidizing the substituted precursors to enhance solvent resistance, allowing for the direct application of photoresist and patterning using conventional semiconductor processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If quantum dots are coated with organic ligands to enable solution-phase synthesis and dispersion, then quantum dots can be easily dispersed in solution, but they exhibit low resistance to organic solvents making them unsuitable for photolithography processes

Engineering Contradiction:
Improvesolution-phase synthesis and dispersionVSAvoidsolvent resistance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the chemical parameter of the surface ligands by replacing organic ligands with inorganic ligands (such as halide ions, cyanide ions, or thiocyanate ions). This parameter change transforms the quantum dot surface properties, enabling both solution-phase synthesis and resistance to organic solvents required for photolithography processes.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite structure by combining inorganic ligands with quantum dot cores, forming a hybrid material system. This composite approach allows the quantum dots to maintain their colloidal stability from organic ligand coating while gaining solvent resistance from the inorganic ligand shell, resolving the contradiction between ease of manufacture and reliability.

Inventive Principle:
Principle #40Composite materials

2Adaptability or versatility

If conventional photolithography is applied to quantum dots, then existing semiconductor processes can be utilized, but the organic solvent in photoresist dissolves the quantum dots making the process impossible

Engineering Contradiction:
Improvecompatibility with semiconductor processesVSAvoiddissolution by photoresist solvent
Core Design Contradiction:
Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

The patent converts the harmful effect of organic solvents (which dissolve organic ligand-coated quantum dots) into a beneficial selection criterion. By replacing organic ligands with inorganic ligands, the quantum dots gain resistance to the very solvents that would otherwise harm them, allowing conventional photolithography processes to be applied without dissolution issues.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent effectively replaces the temporary protective role of organic ligands with more stable inorganic ligands that serve as a permanent protective shell. This substitution eliminates the need for additional protective measures during photolithography, making the process straightforward and compatible with existing semiconductor manufacturing.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Manufacturing precision

If inkjet printing or transfer printing is used to pattern quantum dots, then quantum dot patterns can be formed, but the yield is low and they are not suitable for semiconductor processes

Engineering Contradiction:
Improvepattern formation capabilityVSAvoidmanufacturing yield
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent makes quantum dots universal to multiple manufacturing approaches by modifying their surface chemistry. The inorganic ligand coating enables quantum dots to be processed using standard semiconductor techniques such as spin-coating, dip-coating, and photolithography, in addition to printing methods. This multi-functionality increases manufacturing yield by allowing choice of the most suitable high-yield process.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent replaces mechanical printing processes (inkjet printing, transfer printing) with chemical and photolithographic processes. By making quantum dots resistant to organic solvents and compatible with photoresist, the invention enables photolithography-based patterning, which offers higher precision and better scalability for semiconductor manufacturing compared to mechanical printing methods.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the application of photolithography to quantum dots, improving solvent resistance and process efficiency, reducing patterning time, and simplifying the manufacturing process for high-resolution display devices.

Implementation Method 1

crosslinking between the coated quantum dots by substituting the organic ligand with the precursor

Methodology Applied
Scientific EffectChemical substitution reaction: Chemical Bonding

Implementation Method 2

oxidizing the substituted precursor through an atomic layer deposition process

Methodology Applied
Scientific EffectOxidation: Oxidation

Implementation Method 3

exposing light to partially expose the photoresist

Methodology Applied
Scientific EffectPhotoabsorption: Absorption (EM radiation)

Data Source

PatentUS20230263042A1Quantum dot patterning method using precursor of atomic layer deposition and display device manufactured using the same
Publication Date: 2023.08.17 MYONGJI UNIV IND & ACAD COOPERATION FOUND
  • US20230263042A1 patent drawing
  • US20230263042A1 patent drawing
  • US20230263042A1 patent drawing

AI summary

The present disclosure relates to a photolithography process method and a display device manufactured thereby, and more particularly, to a photolithography process method using a quantum dot thin film having greatly improved resistance to an organic solvent by applying a quantum dot coated with ligand onto a substrate and injecting a precursor used in atomic layer deposition, and a display manufactured thereby.