Quantum Dot Alloy Nanomaterial Radial Gradient Structure

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current quantum dot (QD) materials used in QLED devices face challenges in meeting comprehensive performance requirements, including light-emitting efficiency, stability, and processing properties, as their performance is affected by transitions to solidified films and electro-induced excitation processes, leading to suboptimal device efficiency and stability.

Innovation Solution

A quantum dot alloy nanomaterial with a fully gradient alloy composition structure along the radial direction, comprising alternating units of different energy level widths, formed through a cation exchange reaction between compounds with varying alloy compositions, enhancing light-emission efficiency and charge injection properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If traditional QD materials are used in QLED devices, then the device structure can be simplified, but the light-emitting efficiency and device stability are insufficient

Engineering Contradiction:
Improvedevice structureVSAvoidlight-emitting efficiency and device stability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent employs a core-shell structure combining CdSe core with ZnS shell, creating a composite material system that leverages the high quantum yield of CdSe while utilizing the protective and stabilizing properties of ZnS. This composite approach resolves the contradiction by maintaining structural simplicity while significantly improving light-emitting efficiency and device stability through material composition optimization.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies local quality optimization by creating a gradient alloy composition in the shell region (Cd_xZn_1-xS) where the composition varies from the core-interface to the outer surface. This local variation in material properties optimizes both charge injection at the core-shell interface and surface passivation at the outer region, thereby improving overall device performance without complicating the fundamental device structure.

Inventive Principle:
Principle #3Local quality

2Productivity

If QD materials are directly applied to QLED device structures, then the development process is fast, but the comprehensive performance metrics (efficiency, stability) do not meet industrial requirements

Engineering Contradiction:
Improvedevelopment speedVSAvoidcomprehensive performance metrics
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent implements preliminary action by pre-optimizing the QD material properties through systematic core-shell structure design and gradient alloy composition optimization before device fabrication. The detailed characterization and property tuning of QD materials in advance ensure that when these optimized materials are applied to QLED devices, both development efficiency and final device performance meet industrial requirements.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent utilizes parameter changes by systematically varying the shell composition parameter (x in Cd_xZn_1-xS) to optimize material properties. By adjusting the alloy composition ratio and shell thickness, the patent achieves optimal balance between quantum yield, surface passivation, and charge injection efficiency, thereby improving comprehensive performance metrics while maintaining a streamlined development process.

Inventive Principle:
Principle #35Parameter changes

3Use of energy by moving object

If QD light-emitting properties are optimized, then light-emission efficiency improves, but charge injection and transmission efficiency may be compromised

Engineering Contradiction:
Improvelight-emission efficiencyVSAvoidcharge injection and transmission efficiency
Core Design Contradiction:
Use of energy by moving objectVSEase of manufacture

Solution Approach 1:

The patent applies local quality optimization by creating distinct functional regions: the CdSe core optimized for high quantum yield and light-emission efficiency, the gradient alloy shell (Cd_xZn_1-xS) optimized for charge injection and surface passivation. This spatial differentiation of material properties allows simultaneous optimization of both light-emission efficiency and charge injection efficiency without compromise.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses composite material design where the CdSe core provides superior luminescent properties while the ZnS-rich shell provides excellent charge injection and surface protection. The composite structure enables both high light-emission efficiency from the core and efficient charge injection through the shell, resolving the contradiction between these two performance metrics.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The quantum dot alloy nanomaterial achieves higher light-emission efficiency, improved stability, and comprehensive performance suitability for QLED devices, addressing the limitations of traditional QD materials by minimizing lattice tension and enhancing energy level structures for efficient charge handling.

Implementation Method 1

Quantum dot (QD) is a special material that is confined to a size in the order of nanometers in all three dimensions, The remarkable quantum confinement effect leads to many unique nano-properties of QDs

Methodology Applied
Scientific EffectQuantum confinement effect:

Implementation Method 2

Quantum dot (QD) is a special material that is confined to a size in the order of nanometers in all three dimensions, The remarkable quantum confinement effect leads to many unique nano-properties of QDs, such as continuously-adjustable emission wavelength, narrow emission wavelength, wide absorption spectrum, high emission intensity, long fluorescence lifetime

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS11401469B2Alloy nanomaterial, preparation method therefor, and semiconductor device
Publication Date: 2022.08.02 TCL TECHNOLOGY GROUP CORPORATION
  • US11401469B2 patent drawing
  • US11401469B2 patent drawing
  • US11401469B2 patent drawing

AI summary

A quantum dot alloy nanomaterial, a preparation method therefor, and a semiconductor device. The quantum dot alloy nanomaterial comprises N alloy nanostructured units arranged in sequence in a radial direction, wherein N is larger than or equal to 2. The alloy nanostructured units comprise type A1 and type A2. Type A1 or type A2 is a gradient alloy component structure in which energy level width increases or decreases from inside out in the radial direction, respectively. In quantum dot alloy nanomaterial, alloy nanostructured units of type A1 and type A2 are alternately distributed, and the energy levels of adjacent alloy nanostructured units are continuous. The quantum dot alloy nanomaterial not only achieves higher luminous efficiency, but satisfies comprehensive performance requirements of a QLED device and a corresponding display technology for quantum dot alloy nanomaterial, and is an ideal material applicable to QLED and display technology.