Quantum Dot Light-Emitting Structure With Moisture Barrier Layers

The patent applies the inert atmosphere principle by creating a sealed encapsulation environment around the quantum dots using a wavelength conversion member housing and barrier layers. This encapsulation prevents oxygen and moisture from reaching the quantum dots, effectively creating a protective inert environment that maintains their optical properties and prevents degradation over time, thereby resolving the contradiction between initial performance and long-term durability

The patent employs the intermediary principle by introducing barrier layers (such as aluminum oxide, silicon oxide, or silicon nitride) as mediating elements between the quantum dots and the external environment. These barrier layers act as intermediaries that block the transmission of oxygen and moisture while allowing the quantum dots to maintain their wavelength conversion function, thus protecting the quantum dots without affecting their performance

The patent applies the merging principle by integrating the barrier layer functionality directly into the wavelength conversion member structure. The wavelength conversion member housing and encapsulation layers are combined to form a unified protective structure that simultaneously serves as both the structural housing and the protective barrier, thereby reducing overall device complexity while maintaining quantum dot stability

The patent employs thin film barrier layers (such as aluminum oxide, silicon oxide, or silicon nitride films) to protect the quantum dots. These thin films provide effective protection against oxygen and moisture ingress while adding minimal structural complexity and maintaining a compact device design, thus resolving the contradiction between protection and complexity