Quantum Dot Semiconductor Circuit Reduces Leakage Current
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Solution Overview
Problem
Conventional semiconductor circuits face challenges in reducing power consumption due to increased off-state leakage current as dimensions scale down, especially with reduced operational voltage, making it difficult to maintain equivalent functionality of CMOS circuits.
Innovation Solution
A semiconductor circuit design employing quantum dot structures with semiconductor islands encapsulated by dielectric materials of thickness less than 2 nm, enabling quantum tunneling effects, and conductive material portions that abut these islands to reduce leakage current through quantum tunneling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional field effect transistors are scaled down to nanometer dimensions, then device density and integration are improved, but off-state leakage current increases
Solution Approach 1:
The patent changes the fundamental operating principle from classical field effect to quantum tunneling by adjusting the dielectric thickness to less than 2 nm. This parameter change enables the system to operate in the quantum regime where tunneling current dominates, allowing for low leakage operation at scaled dimensions
Solution Approach 2:
The patent replaces the classical field effect mechanism with quantum tunneling mechanism. Instead of relying on electric field modulation of carrier flow, the system uses quantum mechanical tunneling through thin dielectric barriers to control current, fundamentally substituting the operating principle
2Use of energy by moving object
If operational voltage is reduced to improve power consumption, then energy efficiency is improved, but the ratio between on-current and off-current decreases
Solution Approach 1:
The patent changes the voltage threshold for switching by utilizing quantum tunneling onset voltages. The thin dielectric structure creates specific tunneling threshold voltages that can be tuned to achieve low power operation while maintaining adequate switching ratios, operating at voltages where tunneling is efficient but leakage remains low
3Power
If dielectric material thickness is reduced to less than 2 nm to enable quantum tunneling, then conduction efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs self-aligned fabrication processes where the dielectric layer thickness is controlled by conformal deposition techniques that automatically ensure uniform thickness. The quantum tunneling effect itself provides a natural threshold that self-regulates the switching behavior, reducing the need for precise external control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves low leakage current and efficient operation at low voltages, effectively addressing the power consumption issues in scaled-down semiconductor devices by utilizing quantum tunneling for conduction across dielectric material portions.
Implementation Method 1
The at least one dielectric material layer includes portions having a thickness less than 2 nm to enable quantum tunneling effects. Conduction across a dielectric material portion between a semiconductor island and a conductive material portion is effected by quantum tunneling.
Data Source
AI summary
A semiconductor circuit includes a plurality of semiconductor devices, each including a semiconductor islands having at least one electrical dopant atom and located on an insulator layer. Each semiconductor island is encapsulated by dielectric materials including at least one dielectric material portion. Conductive material portions, at least one of which abut two dielectric material portions that abut two distinct semiconductor islands, are located directly on the at least one dielectric material layer. At least one gate conductor is provided which overlies at least two semiconductor islands. Conduction across a dielectric material portion between a semiconductor island and a conductive material portion is effected by quantum tunneling. The conductive material portions and the at least one gate conductor are employed to form a semiconductor circuit having a low leakage current. A design structure for the semiconductor circuit is also provided.