Quantum Dot Color Filter Transfer Printing
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Solution Overview
Problem
Current manufacturing technologies for quantum dot color filters using inkjet printing result in poor light extraction efficiency due to photoresist polymers being doped into the quantum dot solution, affecting the reliability and performance of the quantum dot blocks.
Innovation Solution
A method involving the formation of a color resist layer with specific block structures on a base substrate, followed by transferring a quantum dot layer onto the resist blocks, avoiding the doping of photoresist polymers, and using high refractive index scattering particles and metal layers to enhance light extraction and alignment precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If quantum dot solution is sprayed by inkjet printing, then quantum dot blocks can be formed, but photoresist polymers are doped into the quantum dot solution causing poor light extraction efficiency
Solution Approach 1:
The patent separates the quantum dot deposition process from the color resist formation process. Instead of spraying quantum dot solution directly onto color resist blocks (which causes photoresist polymer doping), the patent forms quantum dot blocks on a separate substrate first, then transfers them to the color resist layer. This segmentation eliminates the harmful interaction between photoresist polymers and quantum dots while maintaining the ease of block formation.
Solution Approach 2:
The patent extracts the quantum dot blocks from the inkjet printing process that causes photoresist polymer contamination. By transferring pre-formed quantum dot blocks from a separate substrate, the patent removes the source of photoresist polymer doping while preserving the quantum dot block structure and function.
2Productivity
If photoresist polymers are doped into quantum dot solution, then quantum dot blocks can be formed through inkjet printing, but light extraction efficiency is reduced
Solution Approach 1:
The patent divides the manufacturing process into two independent stages: quantum dot block formation on a separate substrate, and transfer to the color resist layer. This segmentation allows high-productivity quantum dot block formation without photoresist polymer contamination, followed by precise transfer to the final position.
Solution Approach 2:
The patent introduces an intermediary substrate for quantum dot block formation. This intermediate substrate allows quantum dot blocks to be formed with high productivity using inkjet printing, then transferred to the color resist layer without carrying over photoresist polymer contamination that would reduce light extraction efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves light extraction efficiency and utilization rate of quantum dots, enabling higher precision and reduced light crosstalk, thus enhancing the quality of the quantum dot color filter substrate and display devices.
Implementation Method 1
heating the quantum dot layer and the color resist layer, contacting them, keeping them warm for a preset time, cooling them to room temperature
Implementation Method 2
heating the quantum dot layer and the color resist layer, contacting them, keeping them warm for a preset time, cooling them to room temperature, and peeling off the silicon substrate to transfer
Implementation Method 3
adding a plurality of high refractive index scattering particles into the B color resist blocks
Data Source
AI summary
A quantum dot color filter substrate, a method for manufacturing the same, and a display device are provided. In the method for manufacturing the quantum dot color filter substrate, a plurality of red (R) color resist blocks, green (G) color resist blocks, and blue (B) color resist blocks each having a structure with a wide top surface and a narrow bottom surface are first formed, and then a quantum dot layer is formed on a silicon substrate, and then the quantum dot layer is contacted with the color resist layer, and then the silicon substrate is peeled off to transfer at least parts of the quantum dot layer in contact with the R color resist blocks and the G color resist blocks to surfaces of the R color resist blocks and the G color resist blocks.