Quantum-Dot Light-Emitting Elements With Composite Hole Transport
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Solution Overview
Problem
The structure of the hole transport layer in light-emitting elements containing quantum dots needs improvement for enhanced luminous efficiency.
Innovation Solution
A light-emitting element with a hole transport layer comprising a p-type semiconductor layer and a n-type semiconductor material dispersed within, and a display device with separate hole transport layers for different colors, each with varying n-type semiconductor material quantities to balance charge carriers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a conventional hole transport layer structure is used, then the device structure is simple, but the charge-carrier balance between holes and electrons is poor, resulting in low luminous efficiency
Solution Approach 1:
The hole transport layer is constructed as a composite material system combining p-type semiconductor material (as the base layer) with n-type semiconductor material (dispersed particles). This composite structure enables simultaneous achievement of good charge-carrier balance and efficient hole transport, resolving the contradiction between simple structure and high luminous efficiency
Solution Approach 2:
The n-type semiconductor material is dispersed within the p-type semiconductor layer to create local regions with different electrical properties. This local quality variation allows the hole transport layer to simultaneously provide hole transport functionality (from p-type regions) and electron injection/charge balance (from n-type regions), thereby improving luminous efficiency without requiring a completely separate layer structure
2Productivity
If the hole transport layer structure is improved for better charge-carrier balance, then luminous efficiency increases, but the manufacturing process becomes more complex
Solution Approach 1:
The invention merges the hole transport function and charge-carrier balance function into a single integrated layer. By combining p-type and n-type semiconductor materials in one layer, the patent eliminates the need for multiple separate layers while achieving superior charge-carrier balance, thus improving luminous efficiency without proportionally increasing manufacturing complexity
Solution Approach 2:
The patent utilizes parameter changes in material properties (electrical conductivity, carrier type) within a single layer structure. By adjusting the ratio and distribution of p-type and n-type materials, the layer can be optimized for different performance requirements, providing a flexible manufacturing approach that balances performance improvement with process simplicity
Data Source
AI summary
A light-emitting element includes: an anode; a cathode; a light-emitting layer between the anode and the cathode; and a hole transport layer between the anode and the light-emitting layer, the hole transport layer including: a p-type semiconductor layer of a p-type semiconductor material provided in a form of a layer; and a n-type semiconductor material dispersed in the p-type semiconductor layer.