Quantum Dot-Organic Diode for Bias-Switched Emission and Sensing
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Solution Overview
Problem
Existing diodes lack the ability to efficiently convert light energy into electrical energy and vice versa, particularly in the infrared and visible light spectra, and to function as both a light emitter and sensor simultaneously.
Innovation Solution
A diode element incorporating a quantum dot and organic semiconductor active layer with specific energy level differences and auxiliary layers, allowing it to operate in both emission and photoelectric conversion states depending on the applied bias.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a conventional diode structure is used, then the device is simple in structure, but it cannot efficiently convert light energy into electrical energy and vice versa across different wavelength regions
Solution Approach 1:
The patent employs a composite active layer combining quantum dots and organic semiconductors to achieve both light emission and photoelectric conversion functions. The quantum dots provide broadband absorption and tunable emission, while the organic semiconductor contributes to charge transport and additional emission mechanisms, creating a synergistic system that resolves the contradiction between energy conversion efficiency and structural simplicity.
Solution Approach 2:
The diode element is designed to perform multiple functions - light emission and photoelectric conversion - within a single device structure. By configuring the active layer with specific energy level alignments and using bias-dependent operation modes, the device can switch between emitting light and detecting light, eliminating the need for separate LEDs and photodiodes.
2Adaptability or versatility
If separate photodiode and LED devices are used, then each device can be optimized for its specific function, but the overall system complexity increases and multiple components are required
Solution Approach 1:
The patent merges the functions of a photodiode and an LED into a single diode element by combining quantum dot and organic semiconductor materials in the active layer. This unified structure allows the device to exhibit both photoelectric conversion and light emission capabilities, reducing component count while maintaining functional versatility through bias-dependent operation modes.
Solution Approach 2:
The diode element is designed to perform multiple functions - light emission and photoelectric conversion - within a single device structure. By configuring the active layer with specific energy level alignments and using bias-dependent operation modes, the device can switch between emitting light and detecting light, eliminating the need for separate LEDs and photodiodes.
3Illumination intensity
If the active layer uses only quantum dots, then the absorption range can be tuned, but the device cannot achieve efficient light emission in the visible spectrum
Solution Approach 1:
The patent employs a composite active layer combining quantum dots and organic semiconductors to achieve both light emission and photoelectric conversion functions. The quantum dots provide broadband absorption and tunable emission, while the organic semiconductor contributes to charge transport and additional emission mechanisms, creating a synergistic system that resolves the contradiction between energy conversion efficiency and structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diode element exhibits hybrid characteristics, enabling efficient light emission and photoelectric conversion across different wavelength regions, suitable for applications in sensors and electronic devices.
Implementation Method 1
a diode element including a first electrode, a second electrode facing the first electrode, and an active layer between the first electrode and the second electrode, wherein the active layer includes a quantum dot having an energy bandgap of about 0.1 eV to about 1.5 eV
Implementation Method 2
an organic semiconductor having a wider energy bandgap than the quantum dot, and a difference between a HOMO energy level of the quantum dot and a HOMO energy level of the organic semiconductor is less than about 1.0 eV. The diode element may exhibit an emission state under a first bias that is one of a forward bias and a reverse bias
Data Source
AI summary
Disclosed are a diode element, a sensor including the same, and an electronic device. The diode element includes a first electrode, a second electrode facing the first electrode, and an active layer between the first electrode and the second electrode, wherein the active layer includes a quantum dot having an energy bandgap of about 0.1 eV to about 1.5 eV and an organic semiconductor having a wider energy bandgap than the quantum dot, and a difference between a HOMO energy level of the quantum dot and a HOMO energy level of the organic semiconductor is less than 1.0 eV.