Quantum Dot Patterning via Electric Field Assembly

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Solution Overview

Problem

Conventional patterning technologies for quantum dots, such as photolithography and inkjet printing, face issues with stability, high ink requirements, poor repeatability, and long preparation times, which hinder their application in fields like LED, display technology, and solar cells.

Innovation Solution

A method involving a device with upper and lower electrodes arranged oppositely to create an electric field, allowing a quantum dot solution to be deposited between them, forming a patterned quantum dot thin film through evaporation, without the need for special base treatment or high formulation system requirements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If photolithography is used for patterning quantum dots, then pattern formation is achieved, but stability of quantum dots deteriorates due to heating, ultraviolet curing, and developer washing

Engineering Contradiction:
Improvepattern formationVSAvoidstability of quantum dots
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent replaces the chemical-based photolithography process with an electric field-based patterning method. By applying voltage to electrode arrays, quantum dots are directly patterned through electrophoretic migration and dielectrophoresis, eliminating the need for photomasks, developers, and chemical treatments that damage quantum dot stability.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental parameter from optical/chemical processing to electrical field processing. By controlling voltage magnitude and electrode configuration, the method achieves precise pattern formation while maintaining quantum dot integrity, as evidenced by the stable electroluminescence observed in the patterned devices.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If inkjet printing is used for patterning quantum dots, then pattern formation is achieved, but preparation time increases and repeatability deteriorates

Engineering Contradiction:
Improvepattern formationVSAvoidpreparation time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent replaces the mechanical inkjet deposition process with an electric field-driven self-assembly method. Quantum dots in solution automatically migrate to electrode regions under applied voltage, eliminating the need for precise mechanical positioning and multiple printing passes, thereby dramatically reducing preparation time while improving repeatability.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The quantum dot solution performs self-patterning when exposed to the electric field. The quantum dots autonomously migrate and accumulate at the electrode regions based on their electrophoretic and dielectrophoretic responses, eliminating the need for complex external control mechanisms and enabling rapid, repeatable pattern formation.

Inventive Principle:
Principle #25Self-service

3Manufacturing precision

If inkjet printing is used for patterning quantum dots, then pattern formation is achieved, but ink requirements become too high and material system becomes complex

Engineering Contradiction:
Improvepattern formationVSAvoidink formulation requirements
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent replaces the inkjet printing system with a simple electrode array structure. The patterning function is achieved through the electric field generated by the electrodes rather than through complex ink formulations, significantly reducing material system complexity while maintaining pattern formation capability.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The electrode array serves multiple functions: it acts as the patterning template, the driving force for quantum dot migration, and the functional element for subsequent device operation. This multi-functionality eliminates the need for separate patterning masks and specialized ink formulations, simplifying the overall system.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enhances the stability and scalability of quantum dot patterning, reducing the complexity of the process and enabling large-scale production suitable for applications in quantum dot displays and other fields.

Implementation Method 1

powering the upper electrodes and the lower electrodes to make the quantum dot solution gather between the upper electrodes and the lower electrodes

Methodology Applied
Scientific EffectElectrophoresis: Electrophoresis

Implementation Method 2

powering the upper electrodes and the lower electrodes to make the quantum dot solution gather between the upper electrodes and the lower electrodes

Methodology Applied
Scientific EffectDielectrophoresis:

Implementation Method 3

evaporating the quantum dot solution to form a patterned quantum dot thin film on the upper surface of the base

Methodology Applied
Scientific EffectEvaporation: Evaporation

Implementation Method 4

heating, vacuuming, or ultraviolet curing the quantum dot solution to volatilize the quantum dot solution

Methodology Applied
Scientific EffectHeating: Heating

Implementation Method 5

heating, vacuuming, or ultraviolet curing the quantum dot solution to volatilize the quantum dot solution

Methodology Applied
Scientific EffectUltraviolet curing: Photopolymerisation

Data Source

PatentUS11377723B2Method of patterning quantum dots, device using same, and system thereof
Publication Date: 2022.07.05 TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD
  • US11377723B2 patent drawing
  • US11377723B2 patent drawing
  • US11377723B2 patent drawing

AI summary

A method of patterning quantum dots, a device using same, and a system thereof are provided. By providing a base between a plurality of upper electrodes and a plurality of lower electrodes, coating a quantum dot solution on an upper surface of the base, and powering the upper electrodes and the lower electrodes to form an electric field between the upper electrodes and the lower electrodes, the quantum dot solution is gathered between the upper electrodes and the lower electrodes according to an electric field distribution. Subsequently, the quantum dot solution can be deposited into a film by evaporation of a solvent, thereby obtaining a patterned quantum dot thin film on the base.