Quantum Dot Composite Structure for Stable Film Emission

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Solution Overview

Problem

Existing quantum dot (QD) materials prepared by traditional methods fail to meet the comprehensive requirements of semiconductor devices, particularly in terms of light-emitting performance, stability, and processing properties, as they do not effectively transfer light-emitting properties from solution to solidified films and do not consider electrical properties and charge management efficiently.

Innovation Solution

A QD composite material is synthesized through a cation exchange reaction between two compounds with different alloy compositions, allowing for a continuous or alternating blue-shift, red-shift, or no-shift in the light-emission peak wavelength, and incorporating zinc, cadmium, selenium, and sulfur precursors to form a gradient or homogeneous alloy composition structure, enhancing light-emission efficiency and stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If QD materials are directly applied from solution to QLED structures, then the light-emitting properties in solution are obtained, but the light-emitting performance is not fully transferred to solidified films with significant red-shift, peak broadening, and quantum yield reduction

Engineering Contradiction:
Improvelight-emitting performance transfer efficiencyVSAvoidlight-emission peak wavelength control
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by systematically adjusting the alloy composition parameters (x and y values in CdxZn1-xSeyS1-y) to control the light-emission peak wavelength and quantum yield. By changing the compositional parameters during synthesis, the QD materials achieve optimal performance transfer from solution to solidified film state

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses composite materials by creating alloyed quantum dots with multiple elements (Cd, Zn, Se, S) in specific compositions. The composite alloy structure CdxZn1-xSeyS1-y combines the advantages of different materials to maintain stable light-emitting properties upon solidification, reducing red-shift and peak broadening

Inventive Principle:
Principle #40Composite materials

2Reliability

If QD materials are optimized for light-emitting properties, then quantum yield and emission intensity are improved, but electrical properties and charge injection efficiency are not considered

Engineering Contradiction:
Improvelight-emission efficiencyVSAvoidelectrical property compatibility
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent applies universality by designing QD materials that simultaneously fulfill multiple functions: they provide efficient light-emitting properties while also possessing compatible electrical characteristics for charge injection and transport. The alloy composition is optimized to achieve both optical and electrical performance requirements for QLED devices

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The QD composite material achieves high light-emission efficiency and stability, meeting the requirements of semiconductor devices by optimizing the energy level structure and composition, leading to improved performance in electroluminescent, photoluminescent, and display applications.

Implementation Method 1

forming the QD composite material through a cation exchange reaction between the first compound and the second compound

Methodology Applied
Scientific EffectCation exchange reaction: Ion Exchange

Implementation Method 2

The remarkable quantum confinement effect leads to many unique nano-properties of QDs

Methodology Applied
Scientific EffectQuantum confinement effect:

Implementation Method 3

QD light-emitting diode (QLED) devices, based on QD materials, have already demonstrated great potential

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS11746293B2Quantum dot composite material, preparation method, and semiconductor device
Publication Date: 2023.09.05 TCL TECHNOLOGY GROUP CORPORATION
  • US11746293B2 patent drawing
  • US11746293B2 patent drawing
  • US11746293B2 patent drawing

AI summary

A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The QD composite material includes a type A3 QD structural unit and a type A4 QD structural unit. The type A3 QD structural units has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A4 QD structural unit has a homogeneous alloy composition structure. An inner part of the QD composite material includes one or more QD structural units having a gradient alloy composition structure, and energy levels in adjacent QD structural units having gradient alloy composition structures are continuous. The QD composite material includes one or more QD structural units having a homogeneous alloy composition structure in a region close to the surface.