Quantum Dot LED Gradient Alloy Transport Layer for Quenching
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Solution Overview
Problem
The fabrication process of quantum dots light emitting diodes is hindered by hydroxyl groups and oxygen vacancies on the surface of zinc oxide layers, leading to fluorescence quenching and electron accumulation, which severely affect the device's lifetime.
Innovation Solution
Incorporating a gradient alloy composite sub-layer with electron transport oxide and non-oxide chalcogen-containing materials, along with an interface non-oxide chalcogen-containing compound, to create a stable electron transport layer that prevents fluorescence quenching and electron accumulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If zinc oxide layer is used as electron transport layer, then electron transport function is provided, but hydroxyl groups and oxygen vacancies cause fluorescence quenching and electron accumulation
Solution Approach 1:
The patent introduces an interface non-oxide chalcogen-containing compound as an intermediary layer between the zinc oxide electron transport layer and the quantum dots layer. This intermediary compound (such as ZnS, CdS, or their alloys) mediates the interaction between the oxide layer and quantum dots, preventing direct harmful interactions while maintaining electron transport functionality. The non-oxide chalcogen-containing compound acts as a buffer that eliminates fluorescence quenching and electron accumulation caused by hydroxyl groups and oxygen vacancies in the zinc oxide layer.
Solution Approach 2:
The patent changes the chemical composition parameter at the interface by introducing non-oxide chalcogen-containing compounds with different chemical properties compared to the oxide materials. This parameter change from oxide to non-oxide chalcogen compounds modifies the interface characteristics, eliminating the harmful effects of hydroxyl groups and oxygen vacancies while preserving the electron transport function.
2Stability of the object's composition
If gradient alloy composite sub-layer is formed with gradient distribution of materials, then interface stability is improved, but fabrication process complexity increases
Solution Approach 1:
The patent applies local quality by creating a gradient alloy composite sub-layer where the material composition varies spatially. The non-oxide chalcogen-containing material has a gradient distribution that changes from one region to another within the electron transport layer, providing different local properties optimized for different functions: better interface compatibility with quantum dots at one end and adequate electron transport at the other end.
Solution Approach 2:
The patent uses composite materials by combining oxide materials (zinc oxide) with non-oxide chalcogen-containing materials in a gradient alloy composite structure. This composite approach integrates the advantages of both material types: the electron transport capability of oxide materials and the interface stability of non-oxide chalcogen-containing materials, creating a multi-functional electron transport layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the stability and longevity of quantum dots light emitting diodes by preventing fluorescence quenching and electron accumulation, thereby improving the device's performance and lifespan.
Implementation Method 1
An electric field is applied to the quantum dots light emitting diode, causing electrons and holes to move into the light emitting layer
Implementation Method 2
In the light emitting layer, the electrons and holes are trapped in the quantum dots and recombine, emitting photons
Implementation Method 3
hydroxyl groups and oxygen vacancies on the surface of zinc oxide layers, leading to fluorescence quenching
Data Source
AI summary
A quantum dots light emitting diode is provided. The quantum dots light emitting diode includes a first electrode layer; an electron transport layer on the first electrode layer; and a quantum dots layer on a side of the electron transport layer away from the first electrode layer. The electron transport layer includes a gradient alloy composite sub-layer including an electron transport oxide material and an electron transport non-oxide chalcogen-containing material. The non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion. The electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.