Quantum Dot Layer Enhances Image Sensor Sensitivity
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Solution Overview
Problem
As image sensors with increased resolution have smaller pixels, the light receiving area decreases, leading to reduced photon intake, increased dark noise, and a lower signal-to-noise ratio, making it difficult to obtain clear images, especially in low-light environments, and there is a need for opto-electronic devices that are miniaturizable, cost-effective, and stable in low-light conditions.
Innovation Solution
An opto-electronic device with a semiconductor substrate, source and drain regions, a quantum dot layer between the source and drain regions, and a transparent electrode layer, surrounded by insulation layers, which enhances sensitivity and signal-to-noise ratio by increasing photocarrier generation and electron-hole separation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the pixel size is reduced to increase resolution, then the resolution of the image sensor is improved, but the light receiving area is reduced and the signal-to-noise ratio is lowered
Solution Approach 1:
The patent introduces a quantum dot layer that changes the optical parameters of the pixel by utilizing quantum confinement effects. The quantum dots convert incident photons into electrons with higher efficiency, effectively changing the light detection parameters to maintain signal quality despite reduced pixel area.
Solution Approach 2:
The patent employs a composite structure combining quantum dots with the semiconductor substrate and insulating layers. This composite material approach allows the integration of quantum dot properties (high light absorption and electron generation efficiency) into the conventional pixel structure, thereby improving signal-to-noise ratio without increasing pixel size.
2Measurement precision
If the pixel size is reduced to increase resolution, then the resolution of the image sensor is improved, but the light receiving area is reduced making it difficult to obtain clear images in low-light environments
Solution Approach 1:
The quantum dot layer modifies the optical parameters by enhancing photon-to-electron conversion efficiency. The quantum confinement effect in quantum dots allows for tuned absorption spectra and improved quantum efficiency, enabling better light capture in low-light conditions despite reduced pixel area.
Solution Approach 2:
The patent applies quantum dot material specifically in the light-receiving region between source and drain regions, creating a localized area of enhanced optical properties. This local quality enhancement focuses the light-capturing capability precisely where photons enter the pixel, maximizing the benefit of quantum dot properties in the critical light-receiving zone.
3Ease of manufacture
If conventional structures are used, then manufacturing is simpler, but sensitivity is lower and cooling modules are required
Solution Approach 1:
The quantum dot layer changes the electrical and optical parameters of the pixel structure. By utilizing quantum confinement effects, the structure achieves higher sensitivity and electron-hole separation efficiency without requiring complex cooling modules, maintaining ease of manufacture while improving performance.
Solution Approach 2:
The patent replaces the need for mechanical cooling modules with a quantum dot-based solution. The quantum dot layer provides inherent thermal management through its quantum confinement properties, eliminating the requirement for additional cooling mechanisms while maintaining high sensitivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves high sensitivity and enhanced signal-to-noise ratio, allowing for clear image capture in low-light conditions without the need for cooling modules, enabling miniaturization and reduced manufacturing costs.
Implementation Method 1
a quantum dot layer provided between the source region and the drain region on the semiconductor substrate and including quantum dots
Implementation Method 2
enhances sensitivity and signal-to-noise ratio by increasing photocarrier generation and electron-hole separation efficiency
Data Source
AI summary
Provided is an opto-electronic device including a semiconductor substrate doped with a first conductivity type impurity, a source region and a drain region provided on the semiconductor substrate spaced apart from each other and doped with a second conductivity type impurity which is electrically opposite to the first conductivity type impurity, a first electrode and a second electrode electrically connected to the source region and the drain region, respectively, a quantum dot layer provided between the source region and the drain region on the semiconductor substrate and including quantum dots, a first insulation layer configured to insulate the semiconductor substrate and the quantum dot layer from each other, and a transparent electrode layer provided on the quantum dot layer.