Quantum Dot LED Chamber Design for Blue Light Management

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Solution Overview

Problem

Quantum dot materials in quantum dot LEDs are susceptible to failure due to high temperature and exposure to water and oxygen, and they receive excessive blue light irradiation, leading to reduced reliability and color gamut performance.

Innovation Solution

A quantum dot LED design featuring a chambered LED support with a filling layer and a quantum dot layer, where the quantum dot layer is positioned at a distance of at least 0.03 mm from the LED chip, and a filling layer with a colloid and scattering layer to distribute blue light uniformly and prevent direct contact, along with a water-oxygen barrier to protect the quantum dots.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the quantum dot layer is placed close to the LED chip to improve light conversion efficiency, then the color gamut performance is improved, but the quantum dot material is exposed to excessive blue light irradiation and high temperature, causing it to fail

Engineering Contradiction:
Improvelight conversion efficiencyVSAvoidquantum dot material stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent introduces a filling layer as an intermediary substance between the LED chip and the quantum dot layer. This filling layer serves as a mediator that reduces the direct exposure of quantum dot material to excessive blue light irradiation and high temperature from the LED chip, while still allowing effective light conversion to occur. The filling layer acts as a buffer that protects the quantum dot material from harmful conditions.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies preliminary protective measures by placing the filling layer before the quantum dot layer is exposed to operational conditions. The filling layer is pre-positioned to establish a protective barrier that prevents direct contact between the LED chip and quantum dot material, thereby preventing damage before it occurs during device operation.

Inventive Principle:
Principle #10Preliminary action

2Device complexity

If the quantum dot material is directly exposed to air to simplify the structure, then the device complexity is reduced, but the quantum dot material deteriorates due to water and oxygen in the air

Engineering Contradiction:
Improvepackaging structure complexityVSAvoidquantum dot material durability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The filling layer serves multiple functions simultaneously: it acts as a protective barrier against water and oxygen, provides structural support, enables light transmission for the optical function, and simplifies the overall packaging structure. By combining multiple functions into a single component, the patent reduces device complexity while maintaining quantum dot material durability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The filling layer is composed of colloid and scattering layer materials that create a composite structure with protective properties. This composite material provides both chemical protection against water and oxygen while maintaining optical transparency, thereby protecting the quantum dot material without requiring complex separate packaging structures.

Inventive Principle:
Principle #40Composite materials

3Use of energy by moving object

If the quantum dot layer is positioned too close to the LED chip, then the light conversion efficiency is improved, but the optical power received by the quantum dot material exceeds its tolerable limit

Engineering Contradiction:
Improvelight conversion efficiencyVSAvoidexcessive optical power exposure
Core Design Contradiction:
Use of energy by moving objectVSObject-affected harmful factors

Solution Approach 1:

The filling layer acts as an intermediary that modulates the optical power transmission from the LED chip to the quantum dot layer. It allows sufficient light for efficient conversion while filtering out excessive optical power that would damage the quantum dot material. The scattering layer within the filling layer helps distribute and moderate the light intensity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the optical parameters by introducing the filling layer with specific optical properties (colloid and scattering characteristics) that modify the light transmission parameters. This allows optimization of the balance between light conversion efficiency and protection from excessive optical power exposure.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design reduces the optical power received by the quantum dot material, extends its lifespan, improves reliability, and maintains high color gamut performance by ensuring the quantum dots operate within tolerable power limits and protecting them from environmental damage.

Implementation Method 1

a filling layer with a colloid and scattering layer to distribute blue light uniformly

Methodology Applied
Scientific EffectLight scattering: Scattering

Implementation Method 2

a blue light LED is used to excite a quantum dot material to produce white light

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Implementation Method 3

a water-oxygen barrier to protect the quantum dots

Methodology Applied
Scientific EffectPhysical barrier protection: Physical Containment

Data Source

PatentUS11508882B2Quantum dot LED, manufacturing method thereof and display device
Publication Date: 2022.11.22 HISENSE VISUAL TECH CO LTD
  • US11508882B2 patent drawing
  • US11508882B2 patent drawing
  • US11508882B2 patent drawing

AI summary

Disclosed in the present application are a quantum dot LED, a manufacturing method thereof, and a display device, belonging to the technical field of LED light sources. The quantum dot LED includes an LED support, an LED chip, a filling layer, and a quantum dot layer, where the LED support comprises a chamber; the LED chip is arranged on a bottom surface of the chamber; the filling layer covers the bottom surface of the chamber and the LED chip, and is engaged with walls of the chamber; and the quantum dot layer is arranged at an opening on a top surface of the chamber, a light incident side of the quantum dot layer abuts against a surface of the filling layer away from the bottom surface of the chamber, and a shortest distance h between the LED chip and the quantum dot layer meets h≥0.03 mm.