Quantum Dot LED HOMO Level Gradient for Charge Balance

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Solution Overview

Problem

In quantum dot (QD) light emitting diodes, charge imbalance due to slower hole injection rates compared to electron injection rates leads to increased driving voltage and decreased quantum efficiency, affecting luminous efficiency.

Innovation Solution

A QD light emitting diode structure is implemented with specific HOMO level differences between layers, including a hole injection layer, first and second hole transporting layers, and a quantum dot light emitting layer, to enhance charge balance, comprising first and second electrodes with a hole injection layer, first and second hole transporting layers, and a quantum dot light emitting layer, where the HOMO level differences between these layers are optimized to improve hole injection characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional QD light emitting diode structure is used, then device simplicity is maintained, but charge balance is destroyed and luminous efficiency is decreased

Engineering Contradiction:
Improveluminous efficiencyVSAvoidlayer structure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The hole transporting layer is divided into multiple sub-layers (first hole transporting layer, second hole transporting layer, third hole transporting layer) with progressively lower HOMO levels. This segmentation allows gradual energy level matching from the hole injection layer to the quantum dot light emitting layer, enabling systematic optimization of hole injection at each interface while maintaining overall charge balance and improving luminous efficiency.

Inventive Principle:
Principle #1Segmentation

2Reliability

If hole injection speed is increased to match electron injection speed, then charge balance is improved, but driving voltage increases

Engineering Contradiction:
Improvecharge balanceVSAvoiddriving voltage
Core Design Contradiction:
ReliabilityVSStress or pressure

Solution Approach 1:

The HOMO levels of the hole transporting layers are systematically adjusted to create a gradient structure. The first hole transporting layer has a higher HOMO level closer to the hole injection layer, while subsequent layers have progressively lower HOMO levels approaching the quantum dot light emitting layer. This parameter optimization enables efficient hole injection without excessive voltage increase, achieving charge balance with acceptable driving voltage.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The optimized HOMO level differences reduce driving voltage and enhance quantum efficiency and luminance of the QD light emitting diode, improving overall light emission efficiency.

Implementation Method 1

When electrons from the cathode and holes from the anode are injected into the light emitting layer, the electrons and holes are paired and then disappear to emit light from the organic light emitting diode

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

The QD generates a strong fluorescence because the extinction coefficient is very high and the quantum efficiency (quantum yield) is excellent

Methodology Applied
Scientific EffectQuantum dot fluorescence: Fluorescence

Data Source

PatentUS10944067B2Quantum dot light emitting diode and quantum dot light emitting display device including the same
Publication Date: 2021.03.09 LG DISPLAY CO LTD
  • US10944067B2 patent drawing
  • US10944067B2 patent drawing
  • US10944067B2 patent drawing

AI summary

A quantum dot light emitting diode comprises first and second electrodes facing each other; a hole injection layer disposed between the first electrode and the second electrode and having a first HOMO level; a first hole transporting layer disposed between the hole injection layer and the second electrode and having a second HOMO level that is lower than the first HOMO level; a second hole transporting layer disposed between the first hole transporting layer and the second electrode and having a third HOMO level that is lower than the second HOMO level; and a quantum dot light emitting layer disposed between the second hole transporting layer and the second electrode and having a fourth HOMO level that is lower than the third HOMO level, wherein a difference between the first HOMO level and the second HOMO level is greater than a difference between the second HOMO level and the third HOMO level and less than a difference between the third HOMO level and the fourth HOMO level.