Quantum Dot Light-Emitting Device Uniform Irradiation
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Solution Overview
Problem
The existing quantum dot light-emitting devices face issues with high temperature failure due to non-uniform light irradiation, leading to the degradation of quantum dots when used in back-light modules, particularly when directly coated on a diaphragm or arranged above LED chips.
Innovation Solution
A quantum dot light-emitting device is designed with a quantum dot layer positioned on a pedestal with a gap from the light-emitting chip and reflection points distributed on its surface opposite to the chip, which reflect light to reduce high-intensity irradiation and ensure uniform light distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If quantum dots are coated on the entire diaphragm to achieve uniform light emission, then color gamut is improved, but quantum dot material consumption increases and cost rises
Solution Approach 1:
The diaphragm is segmented into multiple regions with different quantum dot coatings. The region directly facing the LED chip has no quantum dot coating, while other regions have quantum dot coating. This segmentation reduces quantum dot material consumption while maintaining color gamut performance through strategic placement of quantum dots in specific zones.
2Quantity of substance
If quantum dots are arranged above LED chips as point light sources to save quantum dot material, then material consumption is reduced, but non-uniform light irradiation causes high temperature and quantum dot failure
Solution Approach 1:
Different regions of the diaphragm have different properties: the region directly facing the LED chip has no quantum dot coating to avoid high temperature damage, while other regions have quantum dot coating for light conversion. This local differentiation ensures quantum dot reliability by protecting them from excessive heat while maintaining material efficiency.
3Use of energy by moving object
If the quantum dot layer is positioned close to the light-emitting chip for efficient excitation, then light excitation efficiency is improved, but light power density becomes too high causing quantum dot degradation
Solution Approach 1:
The quantum dot coating is extracted from the region directly facing the LED chip. By removing quantum dots from this specific high-intensity light zone, the patent eliminates the harmful effect of excessive light power density while maintaining excitation efficiency in other regions where quantum dots are strategically placed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration prevents quantum dot failure by reducing high light power exposure and ensures uniform light irradiation, enhancing the reliability and performance of the display device.
Implementation Method 1
reflection points are arranged on a surface of the quantum dot layer opposite to the light-emitting chip, the reflection points being at least distributed in a region of the quantum dot layer directly facing the light-emitting chip
Implementation Method 2
quantum dots of different sizes may be excited by irradiation of the blue light to release red light and green light of high purity
Data Source
AI summary
A quantum dot light-emitting device: a pedestal; a light-emitting chip arranged on the pedestal; and a quantum dot layer arranged on the pedestal, the quantum dot layer being located in a light emergent side of the light-emitting chip with a gap being arranged between the quantum dot layer and the light-emitting chip, wherein reflection points are arranged on a surface of the quantum dot layer opposite to the light-emitting chip, and the reflection points are at least distributed in a region of the quantum dot layer directly facing the light-emitting chip.