Quantum Dot Patterning via Photosensitive Light Irradiation
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Solution Overview
Problem
The production efficiency of Quantum Light Emitting Diodes (QLEDs) is hindered by the lack of high-resolution patterning technology, as existing methods like inkjet printing and photolithography struggle to achieve high-resolution patterns with good performance.
Innovation Solution
A method involving a photosensitive material layer on a substrate, where specific regions are irradiated with light of a preset wavelength to change the configuration of the photosensitive material, allowing for strong adhesion with quantum dots in those regions and easy removal of uncombined dots, thereby patterning quantum dot layers without inkjet printing or photolithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If inkjet printing or photolithography is used for patterning quantum dot layers, then the manufacturing process can be implemented, but high-resolution patterning with good performance cannot be achieved
Solution Approach 1:
The patent changes the chemical state of the photosensitive material through light irradiation, transforming it from a non-reactive state to a reactive state that can strongly bind quantum dots. This parameter change (chemical reactivity) enables precise spatial control of quantum dot adhesion, achieving high-resolution patterning without the limitations of inkjet printing or photolithography
Solution Approach 2:
The patent replaces mechanical patterning methods (inkjet printing, photolithography) with a chemical field-based approach using photosensitive materials. By using light fields to induce chemical changes in the photosensitive material, the system achieves precise quantum dot positioning without mechanical contact or complex lithographic equipment, thereby improving both resolution and production efficiency
2Strength
If a photosensitive material layer is irradiated with light to change configuration, then strong adhesion with quantum dots is achieved in desired regions, but the process complexity increases
Solution Approach 1:
The patent applies preliminary action by pre-coating the substrate with a photosensitive material layer before quantum dot deposition. This preliminary step creates a chemically active surface that will selectively bind quantum dots only in irradiated regions, simplifying the overall patterning process compared to post-deposition patterning methods
Solution Approach 2:
The photosensitive material acts as an intermediary between light and quantum dots. It absorbs light energy, undergoes configuration change, and then mediates the binding between light-exposed regions and quantum dots through chemical interactions. This intermediary mechanism enables indirect control of quantum dot positioning, achieving strong adhesion while maintaining process simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-resolution and high-performance patterning of quantum dot layers, improving the production efficiency of QLEDs by ensuring strong adhesion in desired areas and easy removal of uncombined quantum dots, thus enhancing the manufacturing process.
Implementation Method 1
irradiating a first preset region of the layer of film with light having a preset wavelength; the photosensitive material has a first configuration, and the step of irradiating a first preset region of the layer of film with light having a preset wavelength changes the photosensitive material in the first preset region of the layer of film into a second configuration
Data Source
AI summary
The present disclosure discloses a method of patterning a quantum dot layer, a method of manufacturing a quantum dot light emitting device, and a quantum dot light emitting device. The patterning method includes the steps of: forming on a substrate a layer of film comprising a photosensitive material; irradiating a first preset region of the layer of film with light having a preset wavelength; forming a first quantum dot layer, wherein the photosensitive material in the first preset region of the layer of film is combined with a first quantum dot in the first quantum dot layer; and removing a first quantum dot in the first quantum dot layer that is not combined with the photosensitive material.