Quantum Dot Film Patterning With Atmospheric Degradation Protection

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Solution Overview

Problem

The photoluminescence quantum yield (PLQY) of quantum dot materials significantly decreases when exposed to atmospheric environments during the photolithography process, which is a critical issue for achieving high-efficiency and high-performance Quantum Dot Light Emitting Diode (QLED) devices.

Innovation Solution

A quantum dot film layer patterning method involving the formation of an organic material layer with high transmittance on the quantum dot material layer, followed by exposure to cause crosslinking or generate insoluble salts, and subsequent removal of layers from non-preset areas to protect the quantum dots from atmospheric degradation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If quantum dot material layer is exposed to atmospheric environment during photolithography process, then patterning can be performed, but photoluminescence quantum yield significantly decreases

Engineering Contradiction:

Improvepatterning processVSAvoidphotoluminescence quantum yield

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

An organic material layer is introduced as an intermediary between the quantum dot material layer and the atmospheric environment. This organic layer acts as a protective barrier that prevents direct contact between the quantum dots and atmospheric moisture/oxygen during the photolithography process, thereby maintaining photoluminescence quantum yield while still allowing the patterning process to proceed.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The organic material layer creates a protective environment over the quantum dot material layer, effectively isolating it from the harmful atmospheric environment. This inert-like protection prevents degradation of the quantum dots during exposure to air while enabling the necessary photolithography operations.

Inventive Principle:

Principle #39Inert atmosphere (Inert environment)

2Reliability

If organic material layer with high transmittance is formed on quantum dot material layer, then quantum dots are protected from atmospheric degradation, but light transmission may be affected

Engineering Contradiction:

Improvequantum dot integrityVSAvoidlight transmittance

Core Design Contradiction:

ReliabilityVSIllumination intensity

Solution Approach 1:

The organic material layer is specifically designed with high transmittance parameters in the UV and visible light bands (not less than 80%). By carefully selecting the optical parameters of the organic material, the layer provides protective function while maintaining sufficient light transmission for the photolithography process and subsequent device operation.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively slows down the PLQY decrease of quantum dot materials, enabling the production of high-efficiency and high-performance QLED devices by maintaining quantum dot integrity during patterning processes.

Implementation Method 1

forming an organic material layer on one side of the quantum dot material layer away from the substrate, wherein the organic material layer has a transmittance of not less than 80% in UV and visible light bands

Methodology Applied

Scientific EffectLight absorption: Absorption (EM radiation)

Implementation Method 2

exposing a preset area of the substrate to cause crosslinking of the material in the preset area of the quantum dot material layer or the generation of salts insoluble in the developer

Methodology Applied

Scientific EffectPhotopolymerization: Photopolymerisation

Data Source

PatentUS20250241164A1Quantum dot film layer patterning method, quantum dot light emitting device

Publication Date: 2025.07.24 BEIJING BOE TECH DEV CO LTD

AI summary

The present disclosure provides a quantum dot film layer patterning method and a quantum dot light emitting device, and relate to a field of display technology. The quantum dot film layer patterning method includes: forming a quantum dot material layer on a side of a substrate; forming an organic material layer on one side of the quantum dot material layer away from the substrate, wherein the organic material layer has a transmittance of not less than 80% in UV and visible light bands; exposing a preset area of the substrate to cause crosslinking of the material in the preset area of the quantum dot material layer or the generation of salts insoluble in the developer, or/and to cause crosslinking of the material in the preset area of the organic material layer; removing the organic material layer and the quantum dot material layer from a non-preset area of the substrate, to slow down the PLQY decrease of the quantum dot material layer.