Quantum Dot Layer Patterning Without Resist Removal
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Solution Overview
Problem
The existing methods for patterning quantum dot layers in light-emitting elements involve multiple steps, including the removal of a photoresist layer, which can potentially damage previously formed layers.
Innovation Solution
A method involving the use of a first resist layer formed from a photosensitive resin composition, where the resist layer is patterned and used as a mask to process the quantum dot layer, and a lift-off resist layer is used to pattern both the quantum dot and resist layers simultaneously, reducing the need for additional removal steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a photoresist layer is used as a mask for patterning the quantum dot layer, then the quantum dot layer can be patterned, but multiple steps including photoresist removal are required which increases process complexity and risk of damage
Solution Approach 1:
The patent combines the quantum dot layer and the resist layer into a single integrated structure. The resist layer is formed directly on the quantum dot layer without requiring separate mask application and removal steps. This merging of functions eliminates the need for photoresist removal while maintaining patterning precision, directly resolving the contradiction between manufacturing precision and process complexity.
Solution Approach 2:
The resist layer serves multiple functions simultaneously: it acts as a pattern definition layer, a protective mask during etching, and a final structural component. This multi-functionality eliminates the need for separate photoresist removal steps, reducing process complexity while maintaining the ability to precisely pattern the quantum dot layer.
2Manufacturing precision
If multiple patterning steps are used to form the quantum dot layer, then precise patterns can be achieved, but the probability of damaging previously formed layers increases
Solution Approach 1:
The quantum dot layer is formed first, establishing the base pattern. Then the resist layer is applied directly on top to define the final pattern. This preliminary formation of the quantum dot layer followed by direct resist patterning reduces the number of subsequent processing steps, minimizing opportunities for damage while maintaining pattern accuracy.
Solution Approach 2:
By integrating the resist layer directly onto the quantum dot layer as a unified structure, the patent eliminates the need for separate mask application and removal steps. This reduces the number of processing interfaces and potential damage points, thereby improving layer integrity while maintaining patterning precision.
3Ease of manufacture
If the photoresist layer is removed after patterning, then the quantum dot layer is exposed, but additional processing steps and potential damage occur
Solution Approach 1:
The resist layer is designed to serve as both the patterning mask and a permanent functional layer in the final device structure. This multi-functionality eliminates the need for photoresist removal, simplifying the manufacturing process and eliminating damage risks associated with removal steps while maintaining ease of manufacture.
Solution Approach 2:
The patent extracts the photoresist removal step from the conventional patterning process. By designing the resist layer to remain as part of the final structure rather than being removed, the harmful extraction step is eliminated, improving reliability while maintaining process simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the manufacturing process by eliminating the need to remove the resist layer, thereby minimizing damage to the quantum dot layer and enhancing the reliability of the final product.
Implementation Method 1
a first resist layer is formed by applying a first photosensitive resin composition onto the first light-emitting layer, exposing the first resist layer to light in a predetermined pattern
Implementation Method 2
processing the first light-emitting layer with a treatment liquid using the patterned first resist layer as a mask to form a patterned first light-emitting layer
Data Source
AI summary
A method for manufacturing a light-emitting element includes forming a first light-emitting layer by applying a first quantum dot solution containing first quantum dots, forming a first resist layer by applying a first photosensitive resin composition onto the first light-emitting layer, exposing the first resist layer to light in a predetermined pattern, and performing a pattern formation of developing the first resist layer with a developing solution to form a patterned first resist layer, and processing the first light-emitting layer with a treatment liquid using the patterned first resist layer as a mask to form a patterned first light-emitting layer.