Quantum-dot-in-perovskite solids lattice alignment

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Solution Overview

Problem

Current methods for growing crystalline films with aligned lattice planes often result in interfacial defects due to lattice mismatches, limiting the efficiency of luminescent materials and devices like lasers and solar cells.

Innovation Solution

A composite material is developed with pre-formed crystalline or polycrystalline semiconductor particles embedded in a crystalline or polycrystalline perovskite matrix, where the lattice mismatch does not exceed 10% and the lattice planes are substantially aligned, allowing for epitaxial growth without significant defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If vacuum methods such as MBE, ALE, or MOCVD are used to grow crystalline films, then lattice plane alignment can be achieved, but interfacial defects occur due to lattice mismatch

Engineering Contradiction:

Improvelattice plane alignmentVSAvoidinterfacial defects

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The invention changes the lattice mismatch parameter by selecting quantum dot materials with specific lattice constants that closely match the perovskite matrix (within 10% mismatch). This parameter optimization allows epitaxial growth while minimizing interfacial defects, resolving the contradiction between achieving lattice alignment and preventing defect formation

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite material system combining quantum dots embedded in a perovskite matrix. This composite structure allows the quantum dots to serve as nucleation sites for epitaxial perovskite growth, achieving both lattice plane alignment and reduced interfacial defects through the synergistic combination of two materials with compatible lattice parameters

Inventive Principle:

Principle #40Composite materials

2Adaptability or versatility

If lattice mismatch exceeds 10%, then easier material selection is possible, but interfacial defects increase significantly

Engineering Contradiction:

Improvematerial selection rangeVSAvoidinterfacial defects

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The invention establishes a quantitative threshold (10% lattice mismatch) as a critical parameter for material selection. By changing this parameter constraint, the invention identifies suitable quantum dot-perovskite combinations that balance material versatility with defect minimization, allowing broader material selection while maintaining high interface quality

Inventive Principle:

Principle #35Parameter changes

3Ease of manufacture

If surface states and traps in quantum dots are present, then quantum dots can be synthesized with desired properties, but photoluminescence quantum efficiency decreases

Engineering Contradiction:

Improvequantum dot synthesisVSAvoidphotoluminescence quantum efficiency

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The invention extracts or removes the harmful surface states and traps from the quantum dot system through epitaxial perovskite shell growth. The perovskite matrix envelops the quantum dots, passivating surface defects and eliminating non-radiative recombination centers, thereby achieving high photoluminescence quantum efficiency while maintaining quantum dot synthesis flexibility

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The invention applies beforehand cushioning by using the perovskite matrix to pre-passivate quantum dot surfaces before device operation. The epitaxial growth of perovskite on quantum dots creates a protective interface that prevents surface state formation and trap accumulation, cushioning against efficiency degradation

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach leads to highly efficient light emission and carrier transfer, enhancing the performance of optoelectronic devices by reducing surface states and traps in quantum dots, resulting in significantly improved photoluminescence quantum efficiency.

Implementation Method 1

pre-formed crystalline or polycrystalline semiconductor particles embedded in a crystalline or polycrystalline perovskite matrix, where the lattice mismatch does not exceed 10% and the lattice planes are substantially aligned, allowing for epitaxial growth without significant defects

Methodology Applied

Scientific EffectEpitaxy: Epitaxy

Implementation Method 2

reducing surface states and traps in quantum dots, resulting in significantly improved photoluminescence quantum efficiency

Methodology Applied

Scientific EffectSurface passivation:

Data Source

PatentUS10181538B2Quantum-dot-in-perovskite solids

Publication Date: 2019.01.15 THE GOVERNING COUNCIL OF THE UNIV OF TORONTO

AI summary

The present disclosure provides a composite material of a pre-formed crystalline or polycrystalline semiconductor particles embedded in a crystalline or polycrystalline perovskite matrix material. The pre-formed crystalline or polycrystalline semiconductor particles and and crystalline or polycrystalline perovskite being selected so that any lattice mismatch between the two lattices does not exceed about 10%. The pre-formed crystalline or polycrystalline semiconductor particles and said crystalline or polycrystalline perovskite matrix material have lattice planes that are substantially aligned.