Quantum Dot LED Polymer Sealing for Full-Color Fabrication
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Solution Overview
Problem
The manufacturing process of full-color quantum dot light emitting diodes (QLEDs) involves multiple etching steps, leading to potential loss of quantum dots and thinning of layers, affecting device performance due to exposure to solvents and photoresist development processes.
Innovation Solution
A quantum dot light emitting device with a fully enclosed polymer structure formed by siloxane and thiol siloxane polymerization, sealing quantum dot layers to protect against solvent damage, maintaining layer thickness and ligand integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple etching steps are used in the manufacturing process, then full-color quantum dot light emitting diodes can be manufactured, but quantum dots are lost and layers are thinned, affecting device performance
Solution Approach 1:
A polymer structure is formed to seal the quantum dot layer before the etching process. This preliminary sealing action prevents quantum dots from being lost during subsequent multiple etching steps, while still allowing the manufacturing process to achieve full-color capability through controlled etching of other layers.
Solution Approach 2:
A polymer sealing structure is introduced as a protective shell around the quantum dot layer. This flexible polymer structure maintains the integrity of the quantum dot layer during manufacturing processes, preventing material loss while allowing the device to achieve its full-color functionality.
2Adaptability or versatility
If multiple etching steps are used in the manufacturing process, then full-color quantum dot light emitting diodes can be manufactured, but layer thickness is reduced, affecting device performance
Solution Approach 1:
The polymer sealing structure is formed before etching to establish a protective framework. This preliminary action ensures that layer thickness is maintained during the manufacturing process, as the polymer structure prevents unwanted material removal and maintains structural integrity throughout multiple etching steps.
Solution Approach 2:
The polymer sealing structure acts as a protective film that maintains layer thickness during manufacturing. This flexible shell preserves the precise thickness control of the quantum dot layer while allowing the device to achieve full-color capability through selective etching of other layers.
3Ease of manufacture
If quantum dot layer is exposed to solvents and photoresist development processes, then manufacturing can proceed, but device performance is affected due to solvent damage
Solution Approach 1:
A polymer sealing structure is introduced as a protective barrier between the quantum dot layer and the manufacturing environment. This shell allows manufacturing processes to proceed with solvent and photoresist exposure while preventing direct contact with the quantum dot layer, thus maintaining device performance and reliability.
Solution Approach 2:
The polymer sealing structure serves as an intermediary layer between the quantum dot layer and the manufacturing chemicals. This mediator allows the manufacturing process to access and process other layers while protecting the quantum dot layer from solvent damage, ensuring both ease of manufacture and device reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polymer structure prevents quantum dot loss and maintains consistent film thickness, enhancing device performance by balancing electron and hole recombination regions.
Implementation Method 1
the polymer structure is of a fully enclosed structure at least formed by polymerization of siloxane, thiol siloxane and the hydroxide radical
Implementation Method 2
a sulfur atom of a thiol in the thiol siloxane is combined with a coordinating atom of the quantum dot layer
Implementation Method 3
the polymer structure is of a fully enclosed structure at least formed by polymerization of siloxane, thiol siloxane and the hydroxide radical
Data Source
AI summary
Disclosed are a quantum dot light emitting device and a manufacturing method thereof as well as a display apparatus. The quantum dot light emitting device includes: a substrate; a pixel definition layer, wherein the pixel definition layer includes a plurality of pixel openings and pixel partition bodies, and a surface of each pixel partition body has a hydroxide radical; a quantum dot layer, located in the pixel openings; and a polymer structure sealing the quantum dot layer in the pixel openings, wherein the polymer structure is a of fully enclosed structure at least formed by polymerization of siloxane, thiol siloxane and the hydroxide radical, the siloxane, the hydroxide radical and the thiol siloxane are all polymerized, and a sulfur atom of a thiol in the thiol siloxane is combined with a coordinating atom of the quantum dot layer.