Quantum Dot Thermal Treatment Reducing Self-Absorption

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Solution Overview

Problem

Current quantum dots face challenges in achieving high quantum yield due to self-absorption issues, which limit their efficiency in light emission.

Innovation Solution

A manufacturing method involving a thermal treatment process for quantum dots, where the temperature is increased by 15° C to 75° C for 3 to 7 minutes, shifting the absorption peak to a shorter wavelength while maintaining the emission peak, thereby enhancing the emission-to-absorption intensity ratio and reducing self-absorption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If quantum dot is used for light emission, then high color saturation is achieved, but self-absorption reduces quantum yield

Engineering Contradiction:
Improvecolor saturationVSAvoidquantum yield
Core Design Contradiction:
Illumination intensityVSLoss of energy

Solution Approach 1:

The patent applies parameter changes by performing thermal treatment at elevated temperatures (15-75°C higher than formation temperature) for 3-7 minutes. This thermal parameter change shifts the absorption peak to shorter wavelengths while maintaining the emission peak, thereby increasing the emission-to-absorption intensity ratio and reducing self-absorption losses.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces a temporal dimension by implementing a post-formation thermal treatment step. This additional processing dimension allows the quantum dot's optical properties to be modified after synthesis, separating the formation process from the optimization process and enabling independent control of structural development and optical performance.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Loss of energy

If thermal treatment temperature is increased by 15° C to 75° C for 3 to 7 minutes, then emission-to-absorption intensity ratio is improved, but additional processing time is required

Engineering Contradiction:
Improveemission-to-absorption intensity ratioVSAvoidprocessing time
Core Design Contradiction:
Loss of energyVSLoss of time

Solution Approach 1:

The patent optimizes the thermal treatment parameters within specific ranges (temperature increase of 15-75°C, time of 3-7 minutes) to achieve the desired emission-to-absorption intensity ratio improvement. By defining precise parameter windows, the patent balances the benefit of reduced self-absorption against the cost of additional processing time.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method significantly improves the quantum yield of quantum dots by increasing the emission-to-absorption intensity ratio from 1.5×10^8 CPS/Abs. to 2.0×10^9 CPS/Abs., effectively reducing self-absorption and enhancing light emission efficiency.

Implementation Method 1

A thermal treatment is performed to the fifth solution, wherein a temperature of the thermal treatment is higher than a temperature of forming the fifth solution comprising the quantum dot by 15° C. to 75° C., and a time period of the thermal treatment is 3 minutes to 7 minutes

Methodology Applied
Scientific EffectThermal treatment: Heating

Implementation Method 2

The quantum yield refers to the yield of which the quantum dot converts an incident light into a fluorescent light

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS11485909B2Red quantum dot, light emitting material and manufacturing method of quantum dot
Publication Date: 2022.11.01 HANNSTAR DISPLAY CORP
  • US11485909B2 patent drawing
  • US11485909B2 patent drawing
  • US11485909B2 patent drawing

AI summary

A quantum dot, a light emitting material, and a manufacturing method of quantum dot are provided. A ratio of an emission intensity to an absorption intensity of the quantum dot at a characteristic wavelength ranges from 1.5×108 CPS/Abs. to 2.0×109 CPS/Abs. The characteristic wavelength is a shorter wavelength of two wavelengths corresponding to half of a maximum intensity of an emission peak of the quantum dot.