Hydroxyl-Thiol Ligand Quantum Dots for Toxic-Metal-Free Near-IR Absorption

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Solution Overview

Problem

Existing quantum dots containing toxic heavy metals like cadmium, lead, or mercury pose environmental threats and have limitations in absorbing long-wavelength light, particularly in the infrared region, with poor reproducibility and electrical properties.

Innovation Solution

Development of quantum dots composed of Group IIIA and Group VA elements, such as indium and arsenic, with a ligand derived from an aliphatic hydrocarbon compound substituted with a hydroxyl and thiol group, allowing absorption in the near-infrared region without hazardous metals, and improved electrical properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If quantum dots containing toxic heavy metals (cadmium, lead, mercury) are used, then enhanced optical properties are achieved, but environmental harm and safety issues occur

Engineering Contradiction:
Improveoptical propertiesVSAvoidenvironmental harm
Core Design Contradiction:
Illumination intensityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the compositional parameters of quantum dots by replacing toxic heavy metals (Cd, Pb, Hg) with non-toxic alternative materials while maintaining the nanocrystal structure and size range (2-50 nm). This parameter substitution enables the quantum dots to retain their size-tunable optical properties (absorption and emission wavelengths) without the harmful environmental effects of traditional heavy metal-based QDs

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material design by combining non-toxic semiconductor materials with specific ligand molecules (hydroxyl and thiol groups) to create environmentally friendly quantum dots. The composite structure of core semiconductor material plus functional ligand shell provides both the desired optical properties and environmental safety, eliminating the need for toxic heavy metals while maintaining performance

Inventive Principle:
Principle #40Composite materials

2Illumination intensity

If quantum dots are designed for near-infrared absorption (wavelength ≥1000 nm), then infrared region absorption capability is improved, but material composition constraints increase

Engineering Contradiction:
Improvenear-infrared absorption capabilityVSAvoidmaterial composition flexibility
Core Design Contradiction:
Illumination intensityVSAdaptability or versatility

Solution Approach 1:

The patent adjusts the size parameter of quantum dots (2-50 nm range) and compositional parameters (element ratios, ligand types) to achieve near-infrared absorption at wavelengths of 1000 nm or longer. By controlling particle size and material composition simultaneously, the quantum dots can be tuned to absorb in the near-infrared region while using non-toxic materials, thus meeting both the optical performance requirement and material safety requirement

Inventive Principle:
Principle #35Parameter changes

3Productivity

If conventional quantum dot synthesis methods are used, then production is achieved, but reproducibility and electrical properties are poor

Engineering Contradiction:
Improveproduction capabilityVSAvoidreproducibility and electrical properties
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent introduces specific ligand molecules containing hydroxyl and thiol groups as intermediary components that mediate between the quantum dot core and the external environment. These ligands improve the dispersibility, stability, and electrical properties of quantum dots, enabling better reproducibility in synthesis and enhanced performance in electronic devices while maintaining production feasibility

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent optimizes synthesis parameters including temperature, reaction time, precursor ratios, and ligand concentrations to achieve reproducible production of quantum dots with consistent size and composition. By carefully controlling these parameters, the method achieves both high productivity and reliable reproducibility of quantum dot properties across multiple batches

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The quantum dots exhibit high external quantum efficiency and charge mobility, making them suitable for applications in infrared sensors and field-effect transistors, while being environmentally friendly.

Implementation Method 1

Due to their very small size, these semiconductor nanocrystals have a large surface area per unit volume and exhibit quantum confinement effects. Therefore, they may exhibit different physicochemical characteristics compared to bulk materials.

Methodology Applied
Scientific EffectQuantum confinement effects:

Implementation Method 2

Quantum dots may have their energy bandgaps adjusted based on their size and composition, allowing them to absorb light across various wavelengths

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Data Source

PatentUS20250227971A1Quantum dot, electronic device, and method of preparing quantum dot
Publication Date: 2025.07.10 SAMSUNG ELECTRONICS CO LTD
  • US20250227971A1 patent drawing
  • US20250227971A1 patent drawing
  • US20250227971A1 patent drawing

AI summary

A quantum dot including a Group IIIA element and a Group VA element of the periodic table of elements, wherein the quantum dot has an absorption peak wavelength of greater than or equal to about 1,000 nm in a visible-infrared (Vis-IR) absorption spectrum, and includes a ligand derived from an aliphatic hydrocarbon compound substituted with a hydroxyl group (—OH) and a thiol group (—SH) on its surface, a method for preparing the quantum dot, and an electronic device including the quantum dot.