Quantum Emitter Wavelength Tuning Using Local Phase-Change Regions

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Solution Overview

Problem

Existing techniques for tuning quantum emitters' emission wavelengths fail to individually adjust multiple single-photon emitters to overcome inhomogeneous spectral broadening, which is crucial for quantum information processing applications.

Innovation Solution

A method utilizing a layered structure with a phase change material (PCM) and a matrix material layer, where an electric field is applied to change the emission wavelengths of quantum emitters by altering the PCM's phase from amorphous to crystalline in localized areas, modifying the electric field and allowing for individual tuning of emission wavelengths.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If existing techniques are used to tune quantum emitters' emission wavelengths, then the emission wavelengths can be adjusted, but multiple single-photon emitters cannot be individually adjusted to overcome inhomogeneous spectral broadening

Engineering Contradiction:
Improveindividual tuning capability of quantum emittersVSAvoidspectral overlap precision
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent divides the tuning control into individual segments by placing separate phase change material regions beneath each quantum emitter. This allows independent phase change control for each emitter, enabling individual wavelength tuning while maintaining precise spectral overlap. The segmentation of the PCM into discrete regions directly addresses the inability of existing techniques to individually adjust multiple emitters.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by creating spatially varying phase change material properties beneath different quantum emitters. Each emitter receives a tailored local environment through controlled phase changes in its underlying PCM region, allowing precise adjustment of emission wavelengths to achieve spectral overlap. This local customization resolves the contradiction between individual tunability and spectral precision.

Inventive Principle:
Principle #3Local quality

2Adaptability or versatility

If phase change material is used to locally modify electric field at quantum emitters, then emission wavelengths can be individually tuned, but the device structure becomes more complex

Engineering Contradiction:
Improveindividual wavelength tuning capabilityVSAvoidlayered structure complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent merges the phase change material layer with the existing quantum emitter structure, integrating the tuning functionality into the device architecture rather than adding separate external tuning mechanisms. The PCM layer is positioned between the substrate and quantum emitters, combining structural support with electric field modulation functionality. This merging reduces overall device complexity while maintaining individual wavelength tuning capability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The phase change material serves multiple functions: it provides structural support as a layer in the device architecture, acts as a medium for electric field application, and enables wavelength tuning through phase transitions. This multi-functionality reduces the need for additional components, thereby managing device complexity while achieving individual emitter tunability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Adaptability or versatility

If electric field is applied to change emission wavelengths via Stark effect, then wavelength tuning is achieved, but energy consumption increases

Engineering Contradiction:
Improveemission wavelength adjustabilityVSAvoidenergy required for wavelength tuning
Core Design Contradiction:
Adaptability or versatilityVSUse of energy by moving object

Solution Approach 1:

The patent applies preliminary action by pre-positioning the phase change material in specific phases during device fabrication. The PCM regions are prepared in advance to be in the desired phase state, reducing the energy required during operation to achieve wavelength tuning. This preliminary configuration minimizes the energy needed for subsequent electric field application and phase transitions.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent exploits phase transitions of the phase change material to achieve wavelength tuning with reduced energy consumption. By utilizing the inherent phase transition properties of PCM materials, the system can switch between different emission wavelengths through controlled phase changes rather than requiring continuous high-energy electric fields. This approach significantly reduces the energy required for wavelength adjustment compared to conventional Stark effect methods.

Inventive Principle:
Principle #36Phase transitions

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables precise, programmatic tuning of quantum emitters' wavelengths, enhancing their coupling with other emitters or optical cavity modes, thereby improving the spectral overlap and reducing inhomogeneous broadening.

Implementation Method 1

a phase of the phase change material (PCM) is changed, in a non-volatile manner, in each of one or more local areas of the PCM, e.g., from amorphous to crystalline

Methodology Applied
Scientific EffectPhase change: Phase Change

Implementation Method 2

an electric field is applied through the matrix material layer and the layer of phase change material to change the emission wavelengths of the quantum emitters, e.g., due to the Stark effect and other, related effects

Methodology Applied
Scientific EffectStark effect:

Data Source

PatentUS11848400B2Tuning emission wavelengths of quantum emitters via a phase change material
Publication Date: 2023.12.19 INTERNATIONAL BUSINESS MACHINE CORPORATION
  • US11848400B2 patent drawing
  • US11848400B2 patent drawing
  • US11848400B2 patent drawing

AI summary

A device having a layered structure that includes a layer of phase change material and a matrix material layer having embedding quantum emitters is tuned. An electric field is applied through the matrix material layer and the layer of phase change material to change the emission wavelengths of the quantum emitters. A phase of the phase change material is changed, in a non-volatile manner, in each of one or more of local areas of the phase change material, to form local alterations that are opposite to respective ones of the quantum emitters in the matrix material layer, to locally modify the electric field at the respective quantum emitters.