Quantum Device Substrate Grooves for Reliable Interconnects
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Solution Overview
Problem
Existing methods for electrically connecting the upper and lower surfaces of a quantum device substrate face challenges in maintaining mechanical strength while ensuring reliable electrical connection, particularly due to thin film thicknesses and reduced contact areas in through holes or grooves.
Innovation Solution
A method involving the formation of first and second grooves in the substrate, with conductive films on their inner surfaces, allowing for reliable electrical connection and improved mechanical strength by ensuring contact at the bottom surfaces of these grooves, using a tapered shape to manage film thickness and reduce exposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conductive film is formed in a through hole from upper surface to lower surface of substrate, then electrical connection between upper and lower surfaces is achieved, but mechanical strength of conductive film is reduced due to thin film thickness
Solution Approach 1:
The through hole is divided into two segments: a first groove formed from the upper surface to a first depth, and a second groove formed from the lower surface to a second depth. The first and second grooves meet or overlap to form the complete through hole. This segmentation allows conductive films to be formed in each groove with sufficient thickness while maintaining electrical connection reliability across the substrate.
Solution Approach 2:
The solution transitions from a single vertical through hole to a two-stage groove structure where grooves are formed from opposite surfaces. This dimensional approach allows the conductive films in the first and second grooves to contact at their bottom surfaces, creating a reliable electrical connection path while preserving mechanical strength through optimized film thickness in each segment.
2Reliability
If conductive films are formed in through holes or grooves, then electrical connection is achieved, but contact area between conductive films is reduced
Solution Approach 1:
By segmenting the through hole formation into two separate grooves from opposite surfaces, the structure creates an overlapping region at the bottom where conductive films can contact with sufficient area. The first groove extends to a first depth and the second groove extends to a second depth such that their bottom surfaces contact, ensuring adequate contact area for reliable electrical connection.
3Reliability
If grooves are formed to ensure electrical connection, then connection reliability improves, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process is segmented into two main steps: forming the first groove from the upper surface, then forming the second groove from the lower surface. Each groove formation can be performed using standard etching techniques, and the processes are independent, allowing for simplified process control and reduced overall manufacturing complexity while ensuring reliable electrical connection.
Data Source
AI summary
Provided is a method of manufacturing a quantum device including a qubit and a qubit substrate having a first surface on which the qubit is formed. The method includes forming a first groove in a second surface of the qubit substrate, forming a first conductive film on a bottom surface and a side surface of the first groove, forming a second groove reaching a part of the bottom surface of the first groove in the first surface after the forming the first conductive film, forming a second conductive film on a bottom surface and a side surface of the second groove, and forming the qubit on the first surface.