Quantum Tunneling Photodetector Array for Low Power Image Sensing
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Solution Overview
Problem
Current image sensors, such as CCD and CMOS sensors, face increasing demand but lack innovative alternatives for efficient photon detection, particularly in consumer devices like camera phones and automotive cameras.
Innovation Solution
A quantum tunneling photodetector array is developed, comprising pairs of opposing electrodes with a photo-sensitive insulating material and an electrical circuit to detect photo-assisted quantum tunneling currents, utilizing a cross-grid of nano wires with a fixed separation distance and multiplexer components for demultiplexing signals, enabling efficient photon detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional image sensors (CCD and CMOS) are used to meet increasing demand, then image sensing capability is maintained, but power consumption and device complexity increase
Solution Approach 1:
The patent replaces conventional CCD and CMOS sensor mechanisms with a quantum tunneling-based detection mechanism. The system uses a nanowire array where electrons tunnel through potential barriers created by the nanowires, converting optical signals directly into electrical signals without the need for complex charge transfer or amplification circuits found in traditional sensors. This substitution of the fundamental detection mechanism reduces power consumption while maintaining imaging capability.
Solution Approach 2:
The patent utilizes quantum tunneling parameters (tunneling current, barrier height, nanowire spacing) to optimize the detection process. By adjusting the nanowire diameter, spacing, and material composition, the system achieves efficient photon detection at lower power levels compared to conventional sensors. The tunneling probability and current are tuned through parameter optimization to maximize sensitivity while minimizing energy consumption.
2Productivity
If conventional image sensors are used, then image generation is achieved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent divides the imaging function into discrete nanowire elements arranged in an array. Each nanowire acts as an independent detection unit, and the collective response of the array generates the image. This segmentation simplifies the overall device structure compared to the interconnected pixel circuits of CMOS sensors or the charge transfer mechanism of CCDs. The nanowire array can be integrated with standard CMOS readout circuits, combining simplicity with functionality.
Solution Approach 2:
The nanowire array structure serves multiple functions: it acts as the photon absorption medium, the charge generation region, and the signal modulation element simultaneously. This multi-functionality reduces the number of separate components needed compared to conventional sensors, which require distinct regions for photon detection, charge transfer, storage, and readout. The universal nanowire structure simplifies manufacturing while maintaining full imaging capability.
3Use of energy by moving object
If quantum tunneling photodetector array is implemented, then power consumption is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs thin film deposition techniques to create the nanowire array and insulating layers. The thin film process allows for precise control of layer thickness and composition, ensuring consistent nanowire spacing and barrier heights across the array. This manufacturing approach achieves the required precision through process control rather than mechanical assembly, making high-precision manufacturing scalable.
Solution Approach 2:
The patent optimizes nanowire diameter, spacing, and material composition parameters to achieve the desired quantum tunneling characteristics while maintaining manufacturability. By carefully selecting and tuning these parameters, the system achieves efficient photon detection with relaxed manufacturing tolerances compared to other quantum devices. The parameter optimization balances performance requirements with manufacturing capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The quantum tunneling photodetector array effectively senses photons, providing low power consumption and suitable operating voltages for handheld devices, with applications in various optical devices, including camera phones and automotive cameras, by exploiting photo-assisted quantum tunneling for image generation.
Implementation Method 1
electrical circuit for detecting photo-assisted quantum tunneling currents between the opposing first and second electrode of the respective pairs
Data Source
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AI summary
The invention relates to a quantum tunneling photodetector array comprising an array (100) of pairs of opposing first (102, 104) and second electrodes (106, 108); a photo-sensitive insulating material (308) disposed between the opposing first (102, 104) and second (106, 108) electrodes of the respective pairs; and an electrical circuit (110, 112) for detecting photo-assisted quantum tunneling currents between the opposing first (102, 104) and second (106, 108) electrode of the respective pairs. The invention is characterized in that the array (100) of opposing first (102, 104) and second electrodes (106, 108) are constituted as first and second sets of pixel electrodes respectively.