Quantum Well Doping via Band Alignment
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Solution Overview
Problem
Controlling doping in wide band gap semiconductor materials, such as Aluminum Gallium Nitride, is challenging due to deep impurity levels and inefficient activation, limiting the conductivity of devices like deep ultraviolet light emitting diodes and transistors.
Innovation Solution
A structure with a quantum well and adjacent barrier is designed, where the target band discontinuity coincides with the dopant's activation energy, and the doping level is selected to facilitate a real space transfer of holes, aligning the dopant energy level with the valence energy band edge or ground state energy of the quantum well, thereby reducing activation energy and enhancing conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional doping methods are used in wide band gap semiconductor materials, then the doping process is simple, but the impurity activation efficiency is low and conductivity is limited
Solution Approach 1:
The patent changes the energy parameter of the doping process by creating quantum confined structures with specific band gaps. By engineering the quantum well and barrier layers with precise thicknesses and compositions, the dopant energy levels are shifted to achieve higher activation efficiency and improved conductivity in wide band gap materials
Solution Approach 2:
The patent employs composite quantum well/barrier structures where different semiconductor materials with varying band gaps are combined. This composite approach allows optimization of both the doping characteristics and electrical properties, achieving high conductivity while maintaining the manufacturability of the device
2Temperature
If the dopant energy level is deep in the band gap, then the material maintains its wide band gap properties, but the impurity activation becomes inefficient
Solution Approach 1:
The patent modifies the energy parameter by creating quantum confined states that shift the dopant energy levels. The quantum well structure with engineered band gap creates discrete energy states that enhance impurity activation efficiency while preserving the operational stability provided by the wide band gap material properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a more efficient real space transfer of holes and improved conductivity in semiconductor devices, particularly in deep ultraviolet light emitting diodes and transistors, by aligning dopant energy levels with the quantum well's energy bands, enhancing device performance.
Implementation Method 1
A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier
Implementation Method 2
a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier
Implementation Method 3
a dopant energy level of a dopant in the adjacent barrier coincides with at least one of: a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well
Data Source
AI summary
A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).