Quantum Well Drain Region Photon Generation for HEMT Current Collapse
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Solution Overview
Problem
Group III nitride semiconductor HEMT devices experience 'current collapse' when used as high-frequency or high-voltage high-power switching devices, leading to transient decreases in drain current and increases in dynamic on-resistance due to polarization effects and electron migration, which affects their application.
Innovation Solution
A semiconductor structure with a heterojunction structure including a source region, drain region, and gate region, where the drain region features a quantum well structure comprising an N-type semiconductor layer, a P-type semiconductor layer, and a quantum well layer, which generates photons through recombination luminescence to accelerate the release of electrons captured by defects, reducing current collapse and dynamic on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If HEMT device is operated in high-frequency or high-voltage mode, then device performance is improved, but current collapse occurs due to electron migration to surface donor levels
Solution Approach 1:
The patent converts the harmful polarization effect into a beneficial mechanism by introducing a quantum well structure that generates photons through radiative recombination. These photons accelerate the release of electrons from surface donor levels, transforming the harmful electron migration phenomenon into a useful photo-assisted electron release mechanism that reduces current collapse.
Solution Approach 2:
The patent changes the physical state and recombination mechanism in the quantum well from non-radiative to radiative recombination. By modifying the material composition and structure of the quantum well, the recombination process generates photons that actively participate in electron release, fundamentally changing how electrons are managed at the surface.
2Reliability
If quantum well structure is added to drain region, then electron release is accelerated and current collapse is reduced, but device structure becomes more complex
Solution Approach 1:
The quantum well structure serves multiple functions simultaneously: it acts as a potential barrier in the heterojunction, provides a region for radiative recombination, generates photons for electron release, and modifies the electric field distribution. This multi-functionality allows a single structure to address multiple problems without requiring additional separate components.
Solution Approach 2:
The patent employs composite material structures in the quantum well, combining different semiconductor materials with specific bandgap energies to achieve both the potential barrier function and radiative recombination. The composite structure allows optimization of both electrical and optical properties within a single integrated region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The quantum well structure in the drain region enhances electron release, reducing current collapse and dynamic on-resistance by radiating photons both on the surface and within the heterojunction structure, thereby improving the performance of HEMT devices.
Implementation Method 1
the quantum well structure is used to generate photons by recombination luminescence
Data Source
AI summary
The present disclosure provides a semiconductor structure, including: a substrate and a heterojunction structure disposed on the substrate, where the heterojunction structure includes a source region, a drain region, and a gate region disposed between the source region and the drain region, and the drain region is provided with a quantum well structure. The quantum well structure is provided in the drain region of the heterojunction structure, and the quantum well structure is used to generate photons by recombination luminescence, the photons can be radiated not only on the surface region of the potential barrier layer but also into the interior of the heterojunction structure, thereby the release process of electrons captured by the defects can be accelerated to reduce the current collapse effect as well as the dynamic on-resistance.