Semiconductor Quantum-Well Light Modulator With Grating Resonance

The patent implements a nested structure where the grating pattern is integrated within the semiconductor layers, specifically positioning the grating pattern in the second semiconductor layer with height and pitch dimensions that are less than the wavelength of incident light. This nested configuration allows the light modulating device to achieve high modulation efficiency through the combination of multiple quantum well structure and grating pattern without requiring separate external components, thereby improving productivity while managing device complexity through compact integration.

The patent utilizes the electro-optic effect by applying an electric field to the active layer with multiple quantum well structure, causing the refractive index to change dynamically. The grating pattern with specific pitch and height dimensions (less than the wavelength of incident light) is configured to work with this refractive index change. By optimizing these geometric parameters and the electric field application, the device achieves both high modulation efficiency through the meta structure and improved response time through the electro-optic mechanism, resolving the contradiction between productivity and time loss.

The patent employs a composite structure combining semiconductor layers with the grating pattern integrated into the second semiconductor layer. The grating pattern has dimensions (height and pitch) that are less than the wavelength of incident light, creating a meta structure. This composite configuration, where the grating is formed within the semiconductor material rather than as a separate component, allows the device to achieve high modulation efficiency while the semiconductor material itself provides structural support and electrical control, thereby managing manufacturing precision requirements through the integrated nature of the composite structure.