Quantum Well Intermixed Laser Stripes for Wide Wavelength Coverage
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Solution Overview
Problem
Existing semiconductor laser systems require multiple epitaxial wafers to achieve a wide range of wavelengths, leading to increased complexity, size, and cost.
Innovation Solution
A semiconductor laser chip with multiple laser stripes is fabricated using quantum well intermixing (QWI) on a single epitaxial wafer, allowing for optical gain profile shifts and enabling emission across a wide range of wavelengths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple laser chips are used to achieve wide wavelength range emissions, then the wavelength coverage is improved, but the system size, cost, and complexity increase
Solution Approach 1:
The patent combines multiple laser stripes with different wavelength emissions onto a single laser chip using quantum well intermixing techniques. This merging approach allows the system to achieve wide wavelength coverage (from 1.5 μm to 2.0 μm) while maintaining a compact, integrated structure, thereby reducing system complexity and cost compared to using multiple separate laser chips
Solution Approach 2:
The patent applies quantum well intermixing to specific regions of the laser chip to create localized variations in optical gain profiles. By selectively intermixing quantum wells in different stripes, the system achieves different wavelength emissions from different regions of the same chip, enabling wavelength tunability without increasing overall system complexity
2Adaptability or versatility
If multiple epitaxial wafers are used to create laser stripes with different wavelengths, then the wavelength diversity is improved, but the manufacturing complexity and cost increase
Solution Approach 1:
The patent utilizes quantum well intermixing to change the optical parameters (bandgap energy, refractive index) of specific regions within a single epitaxial wafer. By controlling the degree and location of intermixing, the system achieves different wavelength emissions from different laser stripes grown on the same wafer, thereby achieving wavelength diversity without the need for multiple epitaxial wafers
Solution Approach 2:
The patent performs quantum well intermixing during the epitaxial growth process itself, rather than requiring separate processing of multiple finished wafers. This preliminary action of creating wavelength-selective regions during the initial growth phase simplifies manufacturing by consolidating what would otherwise require multiple discrete wafer fabrication and assembly steps
3Device complexity
If a single epitaxial wafer is used with multiple laser stripes, then the system complexity is reduced, but achieving wide wavelength range requires advanced intermixing techniques
Solution Approach 1:
The patent divides the single epitaxial wafer into multiple distinct laser stripes, each intended for a different wavelength emission. By segmenting the wafer in this way and applying selective quantum well intermixing to specific stripes, the system achieves precise control over wavelength emissions from each segment while maintaining the overall simplicity of a single-chip architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the number of epitaxial wafers needed, simplifying the system while maintaining the ability to emit light across a wide range of wavelengths, thereby reducing complexity and cost.
Implementation Method 1
A laser stripe can be grown with an initial optical gain profile, and its optical gain profile can be shifted by using an intermixing process
Data Source
AI summary
A laser chip including a plurality of stripes is disclosed, where a laser stripe can be grown with an initial optical gain profile, and its optical gain profile can be shifted by using an intermixing process. In this manner, multiple laser stripes can be formed on the same laser chip from the same epitaxial wafer, where at least one laser stripe can have an optical gain profile shifted relative to another laser stripe. For example, each laser stripe can have a shifted optical gain profile relative to its neighboring laser stripe, thereby each laser stripe can emit light with a different range of wavelengths. The laser chip can emit light across a wide range of wavelengths. Examples of the disclosure further includes different regions of a given laser stripe having different intermixing amounts.